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PDF SSE4N60 Data sheet ( Hoja de datos )
| Número de pieza | SSE4N60 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | SeCoS Halbleitertechnologie | |
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Hay una vista previa y un enlace de descarga de SSE4N60 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Elektronische Bauelemente
SSE4N60
4.1A, 600 V, RDS(ON) 2.5 Ω
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The N-Channel MOSFET is used an advanced
termination scheme to provide enhanced voltage-blocking
capability without degrading performance over time.
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior switching
performance. This device is well suited for high efficiency
switched mode power suppliers, active power factor correction,
electronic lamp ballasts based half bridge topology.
FEATURES
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
1
Gate
2
Drain
3
Source
TO-220Y
A
B
E
CD
L
G
FI
H
J
K
M
QQ
123
N
REF.
A
B
C
D
E
F
G
H
Millimeter
Min. Max.
- 10.6
1.58 1.82
1.20 1.45
14.22 16.50
3.50 4.00
2.70 3.30
1.20 1.78
0.50 1.00
REF.
I
J
K
L
M
N
Q
Millimeter
Min. Max.
12.70 14.70
3.60 4.80
1.14 1.40
5.84 6.86
2.03 2.90
0.35 0.64
2.34 2.74
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current
ID
Pulsed Drain Current
Power Dissipation 2
Derating factor above 25°C
Single Pulsed Avalanche Energy 1
Repetitive Avalanche Energy 2
IDM
PD
EAS
EAR
Operating Junction and Storage Temperature Range
TJ, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient 1
RθJA
Maximum Junction to Case
RθJC
Notes:
1. L=26mH, IAS=4.1A, VDD=50V, RG=50Ω, Starting TJ=25°C
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Ratings
600
±30
4.1
16.4
98
0.78
262
3.9
150,-55 ~ 150
62.5
1.28
Unit
V
V
A
A
W
W / °C
mJ
mJ
°C
°C / W
http://www.SeCoSGmbH.com/
02-May-2013 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 6
1 page  
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSE4N60
4.1A, 600 V, RDS(ON) 2.5 Ω
N-Channel Enhancement Mode Power MOSFET
http://www.SeCoSGmbH.com/
02-May-2013 Rev. A
Any changes of specification will not be informed individually.
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSE4N60.PDF ] | |
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