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부품번호 | HCPL-M600 기능 |
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기능 | Small Outline/ 5 Lead/ High CMR/ High Speed/ Logic Gate Optocouplers | ||
제조업체 | Agilent(Hewlett-Packard) | ||
로고 | |||
전체 10 페이지수
Small Outline, 5 Lead, High
CMR, High Speed, Logic Gate
Optocouplers
Technical Data
HCPL-M600
HCPL-M601
HCPL-M611
Features
• Surface Mountable
• Very Small, Low Profile
JEDEC Registered Package
Outline
• Compatible with Infrared
Vapor Phase Reflow and
Wave Soldering Processes
• Internal Shield for High
Common Mode Rejection
(CMR)
HCPL-M601: 10,000 V/µs at
VCM = 50 V
HCPL-M611: 15,000 V/µs at
VCM = 1000 V
• High Speed: 10 Mbd
• LSTTL/TTL Compatible
• Low Input Current
Capability: 5 mA
• Guaranteed ac and dc
Performanceover
Temperature: -40°C to 85°C
• Recognized under the
Component Program of U.L.
(File No. E55361) for
Dielectric Withstand Proof
Test Voltage of 2500 Vac, 1
Minute
Description
These small outline high CMR,
high speed, logic gate optocoup-
lers are single channel devices in
a five lead miniature footprint.
They are electrically equivalent to
the following Agilent
optocouplers (except there is no
output enable feature):
SO-5 Package
HCPL-M600
HCPL-M601
HCPL-M611
Standard DIP
6N137
HCPL-2601
HCPL-2611
SO-8 Package
HCPL-0600
HCPL-0601
HCPL-0611
The SO-5 JEDEC registered (MO-
155) package outline does not
require “through holes” in a PCB.
This package occupies
approximately one fourth the
footprint area of the standard
dual-in-line package. The lead
profile is designed to be com-
patible with standard surface
mount processes.
The HCPL-M600/01/11 optically
coupled gates combine a GaAsP
light emitting diode and an
integrated high gain photon
detector. The output of the
detector I.C. is an Open-collector
Schottky-clamped transistor. The
internal shield provides a
guaranteed common mode
transient immunity specification of
5,000 V/µs for the HCPL-M601,
and 10,000 V/µs for the HCPL-
M611.
This unique design provides
maximum ac and dc circuit
isolation while achieving TTL
compatibility. The optocoupler ac
and dc operational parameters are
guaranteed from -40°C to 85°C
allowing trouble free system
performance.
CAUTION: The small device geometries inherent to the design of this bipolar component increase the component's
susceptibility to damage from electrostatic discharge (ESD). It is advised that normal static precautions be taken
in handling and assembly of this component to prevent damage and/or degradation which may be induced by
ESD.
4
Insulation Related Specifications
Parameter
Symbol Value Units
Conditions
Min. External Air Gap
(Clearance)
L(IO1) ≥5 mm Measured from input terminals
to output terminals
Min. External Tracking Path
(Creepage)
L(IO2) ≥5 mm Measured from input terminals
to output terminals
Min. Internal Plastic Gap
(Clearance)
0.08 mm Through insulation distance
conductor to conductor
Tracking Resistance
CTI 175 V DIN IEC 112/VDE 0303 Part 1
Isolation Group (per DIN VDE 0109)
IIIa Material Group DIN VDE 0109
Electrical Specifications
Over recommended temperature (TA = -40°C to 85°C) unless otherwise specified. (See note 1.)
Parameter Symbol Min. Typ.* Max. Units Test Conditions
Fig.
Input Threshold
Current
High Level Output
Current
Low Level Output
Voltage
High Level Supply
Current
ITH
IOH
VOL
ICCH
2 5 mA VCC = 5.5 V, IO ≥13 mA, 13
VO = 0.6 V
5.5 100 µA VCC = 5.5 V, VO = 5.5 V
IF = 250 µA
1
0.4 0.6
V VCC = 5.5 V, IF = 5 mA, 2, 4,
IOL (Sinking) = 13 mA 5, 13
4 7.5 mA VCC = 5.5 V, IF = 0 mA,
Low Level Supply
Current
ICCL
6 10.5
VCC = 5.5 V, IF = 10 mA,
Input Forward
Voltage
VF 1.4
1.75 V TA = 25°C
1.5
1.3 1.85
IF = 10 mA
Input Reverse
Breakdown Voltage
BVR
5
IR = 10 µA
3
Input Capacitance
CIN
60
pF VF = 0V, f = 1 MHz
Input Diode
∆VF/∆TA
-1.6 mV/°C IF = 10 mA
Temperature
Coefficient
12
Input-Output
Insulation
VISO 2500
VRMS RH ≤ 50%, t = 1 min.
Resistance
(Input-Output)
RI-O
1012
Ω VI-O = 500 V
Capacitance
CI-O
0.6
pF f = 1 MHz
(Input-Output)
Note
3, 4
3
3
*All typicals at TA = 25°C, VCC = 5 V.
4페이지 7
100
VCC = 5.0 V
IF = 7.5 mA
80
tPLH , RL = 4 KΩ
tPHL , RL = 350 Ω
1 KΩ
60 4 KΩ
40 tPLH , RL = 1 KΩ
tPLH , RL = 350 Ω
20
0
-60 -40 -20 0 20 40 60 80 100
TA – TEMPERATURE – °C
Figure 7. Propagation Delay vs.
Temperature.
105
VCC = 5.0 V
TA = 25°C
90
tPLH , RL = 4 KΩ
75
tPLH , RL = 350 Ω
60
tPLH , RL = 1 KΩ
45 tPHL , RL = 350 Ω
1 KΩ
30 4 KΩ
5 7 9 11 13 15
IF – PULSE INPUT CURRENT – mA
Figure 8. Propagation Delay vs.
Pulse Input Current.
40
RL = 4 kΩ
30
VCC = 5.0 V
IF = 7.5 mA
20
RL = 350 kΩ
10
0
-10
-60 -40 -20
RL = 1 kΩ
0 20 40 60 80 100
TA – TEMPERATURE – °C
Figure 9. Pulse Width Distortion vs.
Temperature.
VCC = 5.0 V
IF = 7.5 mA
tRISE
tFALL
300 RL = 4 kΩ
290
60
RL = 1 kΩ
40
20 RL = 350 Ω
0 RL = 350 Ω, 1 kΩ, 4 kΩ
-60 -40 -20 0 20 40 60 80 100
TA – TEMPERATURE – °C
Figure 10. Rise and Fall Time vs.
Temperature.
-2.4
-2.2
-2.0
-1.8
-1.6
-1.4
-1.2
0.1
1
10 100
IF – PULSE INPUT CURRENT – mA
Figure 12. Temperature Coefficient
for Forward Voltage vs. Input
Current.
IF
B
1
A
VFF
3
VCC 6
5
4
GND
0.1 µF
BYPASS
+5 V
350 Ω
OUTPUT VO
MONITORING
NODE
+_
PULSE
GENERATOR
ZO = 50 Ω
VCM
0V
5V
VO
VO
0.5 V
VCM (PEAK)
SWITCH AT A: IF = 0 mA
VO (MIN.)
SWITCH AT B: IF = 7.5 mA
VO (MAX.)
CMH
CML
Figure 11. Test Circuit for Common
Mode Transient Immunity and
Typical Waveforms.
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ HCPL-M600.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
HCPL-M600 | Small Outline/ 5 Lead/ High CMR/ High Speed/ Logic Gate Optocouplers | Agilent(Hewlett-Packard) |
HCPL-M601 | Small Outline/ 5 Lead/ High CMR/ High Speed/ Logic Gate Optocouplers | Agilent(Hewlett-Packard) |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |