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PDF NE2SC5606 Data sheet ( Hoja de datos )
| Número de pieza | NE2SC5606 | |
| Descripción | NPN SILICON RF TRANSISTOR | |
| Fabricantes | California Eastern Labs | |
| Logotipo |  |
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NPN SILICON RF TRANSISTOR
NE66219 / 2SC5606
NPN SILICON RF TRANSISTOR FOR
LOW NOISE · HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
FEATURES
• Suitable for high-frequency oscillation
• fT = 25 GHz technology adopted
• 3-pin ultra super minimold (19, 1608 PKG) package
<R> ORDERING INFORMATION
Part Number Order Number
Package
NEC66219
2SC5606
NE66219-A
2SC5606-A
3-pin ultra super minimold
(19, 1608 PKG) (Pb-Free)
NE66219-T1 NE66219-T1-A
2SC5606-T1 2SC5606-T1-A
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PtotNote
Tj
Tstg
Ratings
15
3.3
1.5
35
115
150
65 to +150
Note Mounted on 1.08 cm2 1.0 mm (t) glass epoxy substrate
Unit
V
V
V
mA
mW
C
C
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10781EJ01V0DS (1st edition)
(Previous No. P14658EJ3V0DS00)
Date Published August 2009 NS
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1 page  
NE66219 / 2SC5606
Remark The graph indicates nominal characteristics.
<R> S-PARAMETERS
Data Sheet PU10781EJ01V0DS
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NE2SC5606.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NE2SC5606 | NPN SILICON RF TRANSISTOR | California Eastern Labs |
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