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부품번호 | NV4V41SF 기능 |
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기능 | Blue-Violet Laser Diode 405nm Blue-Violet Laser Light Source | ||
제조업체 | California Eastern Labs | ||
로고 | |||
전체 9 페이지수
NV4V41SF
Blue-Violet Laser Diode
405 nm Blue-Violet Laser Light Source
A Business Partner of Renesas Electronics Corporation.
Preliminary
Data Sheet
R08DS0064EJ0200
Rev.2.00
Jun 20, 2013
DESCRIPTION
The NV4V41SF is a high output blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip
structure achieves a high optical power output of 600 mW (CW).
FEATURES
• High optical output power
• Peak wavelength
• Multi transverse mode (lateral)
• Operating temperature range
• φ 5.6 mm CAN package
Po = 600 mW @CW
λp = 400 to 405 nm
TC = 0 to +30°C
APPLICATIONS
• Blue-violet laser light source
• Light source for Laser Direct Imaging system
• Light source for industrial manufacturing equipment
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R08DS0064EJ0200 Rev.2.00
Jun 20, 2013
Page 1 of 7
NV4V41SF
TYPICAL CHARACTERISTICS
(TC = 25°C, unless otherwise specified)
OPTICAL OUTPUT POWER
vs. FORWARD CURRENT
700
600 10°C
20°C
500
30°C
40°C
400
300
200
100
0
0 100 200 300 400 500 600 700
Forward Current IF (mA)
POWER DEPENDENCE OF
PEAK WAVELENGTH
406
25°C
405 N= 5
404
403
402
401
400
399
0
0.0038 nm/mW
200 400 600 800
Optical Output Power PO (mW)
FFP (LATERAL)
600 mW
400 mW
200 mW
−30 −20 −10 0
10 20
Beam Divergence (degrees)
30
Remark The graphs indicate nominal characteristics.
R08DS0064EJ0200 Rev.2.00
Jun 20, 2013
A Business Partner of Renesas Electronics Corporation.
Chapter Title
FORWARD VOLTAGE vs.
FORWARD CURRENT
6
10°C
5 20°C
30°C
4 40°C
3
2
1
0
0 100 200 300 400 500 600 700
Forward Current IF (mA)
TEMPERATURE DEPENDENCE OF
PEAK WAVELENGTH
406
600 mW
405 N= 5
404
403
402
401
400
399
0
0.079 nm/°C
10 20 30 40 50
Temperature (°C)
FFP (VERTICAL)
600 mW
400 mW
200 mW
−40 −30 −20 −10 0 10 20 30 40
Beam Divergence (degrees)
Page 4 of 7
4페이지 NV4V41SF
A Business Partner of Renesas Electronics Corporation.
Chapter Title
SAFETY INFORMATION ON THIS PRODUCT
DANGER
SEMICONDUCTOR LASER
VISIBLE LASER RADIATION
AVOID EYE OR SKIN EXPOSURE TO
DIRECT OR SCATTERED RADIATION
OUTPUT POWER 3W MAX
WAVELENGTH 400 to 680nm
CLASS IV LASER PRODUCT
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
Warning Laser Beam
A laser beam is emitted from this diode during operation.
If the laser beam or its reflection enters your eye, it may cause injury to the eye or loss of eyesight.
(Note that, depending on the wavelength of the beam, the laser beam might not be visible.)
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
R08DS0064EJ0200 Rev.2.00
Jun 20, 2013
Page 7 of 7
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ NV4V41SF.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
NV4V41SF | Blue-Violet Laser Diode 405nm Blue-Violet Laser Light Source | California Eastern Labs |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |