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부품번호 | BUK7Y10-30B 기능 |
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기능 | N-channel TrenchMOS standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 14 페이지수
BUK7Y10-30B
N-channel TrenchMOS standard level FET
Rev. 03 — 9 April 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Loads
Automotive systems
General purpose power switch
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 4
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12;
see Figure 13
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 67 A; Vsup ≤ 30 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
QGD
gate-drain charge ID = 25 A; VDS = 24 V;
VGS = 10 V; see Figure 14
Min Typ Max Unit
- - 30 V
- - 67 A
- - 85 W
- 7.8 10 mΩ
- - 101 mJ
- 5.6 - nC
NXP Semiconductors
BUK7Y10-30B
N-channel TrenchMOS standard level FET
003aac512
80
ID
(A)
60
40
20
0
0 50 100 150 200
Tmb (°C)
120
Pder
(%)
80
03na19
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
102
IAL
(A)
10
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aac491
(1)
(2)
(3)
10-1
10-3
10-2
10-1
1 10
tAL (ms)
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK7Y10-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 9 April 2010
© NXP B.V. 2010. All rights reserved.
4 of 14
4페이지 NXP Semiconductors
BUK7Y10-30B
N-channel TrenchMOS standard level FET
70
20V 10V
ID
(A)
56
42
28
14
003aad622
VGS (V) = 6.2V
5.9V
5.5V
5.1V
4.7V
0
012345
VDS (V)
100
RDSon
(mΩ)
75
4.7V
5.1V
003aad623
VGS (V) = 5.5V 5.9V
50
25
0
0
6.2V
10V
20V
20 40 60
ID (A)
Fig 6. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values.
of drain current; typical values.
60
ID
(A)
40
003aad624
20
gfs
(S)
15
003aad629
10
20
Tj = 175°C
25 °C
5
0
02468
VGS (V)
0
0 15 30 45 ID (A) 60
Fig 8. Transfer characteristics: drain current as a
Fig 9. Forward transconductance as a function of
function of gate-source voltage; typical values.
drain current; typical values.
BUK7Y10-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 9 April 2010
© NXP B.V. 2010. All rights reserved.
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BUK7Y10-30B | N-channel TrenchMOS standard level FET | NXP Semiconductors |
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