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BUK7Y10-30B PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7Y10-30B
기능 N-channel TrenchMOS standard level FET
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BUK7Y10-30B 데이터시트, 핀배열, 회로
BUK7Y10-30B
N-channel TrenchMOS standard level FET
Rev. 03 — 9 April 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
„ Q101 compliant
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V Loads
„ Automotive systems
„ General purpose power switch
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 4
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12;
see Figure 13
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 67 A; Vsup 30 V;
RGS = 50 ; VGS = 10 V;
Tj(init) = 25 °C; unclamped
QGD
gate-drain charge ID = 25 A; VDS = 24 V;
VGS = 10 V; see Figure 14
Min Typ Max Unit
- - 30 V
- - 67 A
- - 85 W
- 7.8 10 m
- - 101 mJ
- 5.6 - nC




BUK7Y10-30B pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK7Y10-30B
N-channel TrenchMOS standard level FET
003aac512
80
ID
(A)
60
40
20
0
0 50 100 150 200
Tmb (°C)
120
Pder
(%)
80
03na19
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
102
IAL
(A)
10
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aac491
(1)
(2)
(3)
10-1
10-3
10-2
10-1
1 10
tAL (ms)
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK7Y10-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 9 April 2010
© NXP B.V. 2010. All rights reserved.
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BUK7Y10-30B 전자부품, 판매, 대치품
NXP Semiconductors
BUK7Y10-30B
N-channel TrenchMOS standard level FET
70
20V 10V
ID
(A)
56
42
28
14
003aad622
VGS (V) = 6.2V
5.9V
5.5V
5.1V
4.7V
0
012345
VDS (V)
100
RDSon
(mΩ)
75
4.7V
5.1V
003aad623
VGS (V) = 5.5V 5.9V
50
25
0
0
6.2V
10V
20V
20 40 60
ID (A)
Fig 6. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values.
of drain current; typical values.
60
ID
(A)
40
003aad624
20
gfs
(S)
15
003aad629
10
20
Tj = 175°C
25 °C
5
0
02468
VGS (V)
0
0 15 30 45 ID (A) 60
Fig 8. Transfer characteristics: drain current as a
Fig 9. Forward transconductance as a function of
function of gate-source voltage; typical values.
drain current; typical values.
BUK7Y10-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 9 April 2010
© NXP B.V. 2010. All rights reserved.
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BUK7Y10-30B

N-channel TrenchMOS standard level FET

NXP Semiconductors
NXP Semiconductors

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