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부품번호 | BUK9Y22-30B 기능 |
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기능 | N-channel TrenchMOS logic level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 14 페이지수
BUK9Y22-30B
N-channel TrenchMOS logic level FET
Rev. 04 — 7 April 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 1; see Figure 4
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 5 V; ID = 20 A;
Tj = 25 °C; see Figure 12;
see Figure 13
VGS = 10 V; ID = 20 A;
Tj = 25 °C
Min Typ Max Unit
- - 30 V
- - 37.7 A
- - 59.4 W
- 17 22 mΩ
- 13.5 19 mΩ
NXP Semiconductors
BUK9Y22-30B
N-channel TrenchMOS logic level FET
003aac517
40
ID
(A)
30
20
10
0
0 50 100 150 200
Tmb (°C)
120
Pder
(%)
80
003aab844
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
102
IAL
(A)
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aac496
(1)
(2)
1
(3)
10-1
10-3
10-2
10-1
1 10
tAL (ms)
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK9Y22-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
4 of 14
4페이지 NXP Semiconductors
BUK9Y22-30B
N-channel TrenchMOS logic level FET
120
ID
(A)
VGS (V) = 15
10
80
40
0
0246
003aac961
5
4
3.6
3.4
3
2.6
2.2
8 10
VDS (V)
120
RDSon
(mΩ)
3
2.6
3.6
3.4
4
80
5
003aac965
40
0
0
10
VGS (V) = 15
40 80 120
ID (A)
Fig 6. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values.
of drain current; typical values.
30
gfs
(S)
20
003aac966
20
ID
(A)
15
003aac962
10
10 Tj = 175 °C
5
Tj = 25 °C
0
0 10 20 30
ID (A)
0
01234
VGS (V)
Fig 8. Forward transconductance as a function of
drain current; typical values.
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
BUK9Y22-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
7 of 14
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BUK9Y22-30B | N-channel TrenchMOS logic level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |