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부품번호 | BUK761R8-30C 기능 |
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기능 | N-channel TrenchMOS standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 15 페이지수
BUK761R8-30C
N-channel TrenchMOS standard level FET
Rev. 02 — 20 August 2007
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package,
using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology.
1.2 Features
175 °C rated
Standard level compatible
Q101 compliant
TrenchMOS technology
1.3 Applications
12 V loads
General purpose power switching
Automotive systems
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
ID drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1 and 4
[1][2] - - 100 A
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Static characteristics
- - 333 W
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12 and
13
- 1.5 1.8 mΩ
Avalanche ruggedness
EDS(AL)S non-repetitive
ID = 100 A; Vsup ≤ 30 V;
drain-source avalanche RGS = 50 Ω; VGS = 10 V;
energy
Tj(init) = 25 °C
- - 1.7 J
[1] Refer to document 9397 750 12572 for further information.
[2] Continuous current is limited by package.
NXP Semiconductors
BUK761R8-30C
N-channel TrenchMOS standard level FET
103 003aab373
IAL
(A)
102 (1)
(2)
10
(3)
1
10-3
10-2
10-1
1 tAL (ms) 10
(1) Singleípulse; Tmb = 25 °C.
(2) Singleípulse; Tmb = 150 °C.
(3) Repetitive.
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
104
ID
(A)
Limit RDSon = VDS / ID
103
003aab339
tp = 10 μs
102
(1)
100 μs
10
1
10-1
DC 1 ms
10 ms
100 ms
1
10
VDS (V)
102
Tmb = 25 °C; IDM is single pulse
(1) Capped at 100 A due to package.
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK761R8-30C_2
Product data sheet
Rev. 02 — 20 August 2007
© NXP B.V. 2007. All rights reserved.
4 of 15
4페이지 NXP Semiconductors
BUK761R8-30C
N-channel TrenchMOS standard level FET
Table 6.
Symbol
tf
LD
LS
Characteristics …continued
Parameter
Conditions
fall time
internal drain
inductance
VDS = 25 V; RL = 1.2 Ω;
VGS = 10 V; RG(ext) = 10 Ω
from upper edge of drain
mounting base to center of die
internal source
inductance
from source lead to source
bonding pad
Min Typ Max Unit
- 134 - ns
- 2.5 - nH
- 7.5 - nH
300
ID 20
(A)
7
6
200
003aab341
5.5
VGS (V) = 5
100
4.5
4
0
0 2 4 6 8 VDS (V)10
T j = 25 °C
8
RDSon
(mΩ)
6
VGS (V) = 5
003aab361
5.5
4
2
0
0 100
T j = 25 °C
7
15 20
200 ID (A) 300
Fig 6. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of drain current; typical values
BUK761R8-30C_2
Product data sheet
Rev. 02 — 20 August 2007
© NXP B.V. 2007. All rights reserved.
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BUK761R8-30C | N-channel TrenchMOS standard level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |