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부품번호 | BUK6213-30A 기능 |
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기능 | TrenchMOS Intermediate level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BUK6213-30A
TrenchMOS™ Intermediate level FET
Rev. 02 — 22 September 2003
M3D300
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips General Purpose Automotive (GPA) TrenchMOS™ technology.
1.2 Features
s Low on-state resistance
s 175 °C rated
s Q101 compliant
s Intermediate level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V loads
s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 267 mJ
s ID ≤ 55 A
s RDSon = 10 mΩ (typ)
s Ptot ≤ 102 W.
2. Pinning information
Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
[1]
mb
3 source (s)
mb mounting base;
connected to
drain (d)
2
13
Top view
MBK091
SOT428 (D-PAK)
[1] It is not possible to make connection to pin 2 of the package.
Symbol
d
g
MBB076
s
Philips Semiconductors
5. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Rth(j-a)
thermal resistance from junction to
ambient
Rth(j-mb) thermal resistance from junction to
mounting base
Conditions
Figure 4
5.1 Transient thermal impedance
BUK6213-30A
TrenchMOS™ Intermediate level FET
Min Typ Max Unit
-
71.4 -
K/W
- - 1.4 K/W
10
Zth(j-mb)
(K/W)
1 δ = 0.5
0.2
0.1
10-1 0.05
0.02
10-2
single shot
10-3
10-6
10-5
10-4
10-3
10-2
03nk63
P
δ
=
tp
T
tp
T
t
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 12028
Product data
Rev. 02 — 22 September 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4 of 13
4페이지 Philips Semiconductors
BUK6213-30A
TrenchMOS™ Intermediate level FET
200
ID
(A)
150
14
12
100
50
0
0
20 10
9
8
7.5
7
6.5
6
5.5
5
4.5
4
3.5
3
24
03nk59
Label is VGS (V)
6 8 10
VDS (V)
30
RDSon
(mΩ)
25
20
15
10
5
0
03nk58
5 10 15 20
VGS (V)
Tj = 25 °C; tp = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C; ID = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
30
RDSon
(mΩ)
20
10
03nk60
label is VGS (V)
5
4.5
4
3.5
10
20
2
a
1.5
1
0.5
03aa27
0
0 50 100
Tj = 25 °C; tp = 300 µs
150 200
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60 0 60 120 180
Tj (°C)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 12028
Product data
Rev. 02 — 22 September 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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부품번호 | 상세설명 및 기능 | 제조사 |
BUK6213-30A | TrenchMOS Intermediate level FET | NXP Semiconductors |
BUK6213-30C | N-channel TrenchMOS intermediate level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |