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PDF BUK952R4-40C Data sheet ( Hoja de datos )
| Número de pieza | BUK952R4-40C | |
| Descripción | N-channel TrenchMOS logic level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK952R4-40C
N-channel TrenchMOS logic level FET
Rev. 02 — 11 April 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Q101 compliant
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
General purpose power switching
Automotive systems
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
VGS = 5 V; Tj = 25 °C;
see Figure 1 and 4
- - 40 V
[1][2] - - 100 A
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Avalanche ruggedness
- - 333 W
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 100 A; Vsup ≤ 40 V;
RGS = 50 Ω; VGS = 5 V;
Tj(init) = 25 °C; unclamped
- - 1.2 J
QGD gate-drain charge
Static characteristics
VGS = 5 V; ID = 25 A;
VDS = 32 V; see Figure 14
- 73 - nC
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 25 A;
Tj = 25 °C; see Figure 12, 11
and 13
- 2.1 2.4 mΩ
[1] Continuous current is limited by package.
[2] Refer to document 9397 750 12572 for further information.
1 page  
NXP Semiconductors
BUK952R4-40C
N-channel TrenchMOS logic level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-a)
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to
ambient
vertical in free air
thermal resistance
from junction to
mounting base
see Figure 5
Min Typ Max Unit
- 60 - K/W
- - 0.45 K/W
1
Zth(j-mb)
(K/W) δ = 0.5
10−1
10−2
0.2
0.1
0.05
0.02
single shot
10−3
10−6
10−5
10−4
10−3
10−2
003aab020
P
tp
δ=
T
10−1
tp
T
tp (s)
t
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 250 μA; VGS = 0 V;
Tj = 25 °C
ID = 250 μA; VGS = 0 V;
Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 9 and 10
ID = 1 mA; VDS = VGS;
Tj = -55 °C; see Figure 9
ID = 1 mA; VDS = VGS;
Tj = 175 °C; see Figure 9
IDSS drain leakage current VDS = 40 V; VGS = 0 V;
Tj = 175 °C
VDS = 40 V; VGS = 0 V; Tj = 25 °C
BUK952R4-40C_2
Product data sheet
Rev. 02 — 11 April 2008
Min
40
36
1
-
0.5
-
-
Typ
-
-
1.5
-
-
-
0.02
Max Unit
-V
-V
2V
2.3 V
-V
500 μA
1 μA
© NXP B.V. 2008. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
BUK952R4-40C
N-channel TrenchMOS logic level FET
8. Revision history
Table 7. Revision history
Document ID
Release date Data sheet status
BUK952R4-40C_2
Modifications:
BUK952R4-40C_1
20080411
Product data sheet
• Table 6: VDS condition for IDSS corrected.
20080328
Product data sheet
Change notice
-
Supersedes
BUK952R4-40C_1
-
BUK952R4-40C_2
Product data sheet
Rev. 02 — 11 April 2008
© NXP B.V. 2008. All rights reserved.
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