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PDF BUK6507-75C Data sheet ( Hoja de datos )
| Número de pieza | BUK6507-75C | |
| Descripción | N-channel TrenchMOS FET | |
| Fabricantes | NXP Semiconductors | |
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BUK6507-75C
N-channel TrenchMOS FET
Rev. 02 — 4 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Tmb = 25 °C;
see Figure 2
Min Typ Max Unit
- - 75 V
[1] - - 100 A
- - 204 W
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11
- 6.5 7.6 mΩ
1 page  
NXP Semiconductors
BUK6507-75C
N-channel TrenchMOS FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
see Figure 4
Min Typ Max Unit
- - 0.74 K/W
1
Zth(j-mb)
(K/W)
10−1
δ = 0.5
0.2
0.1
0.05
0.02
10−2
single pulse
003aae545
P
tp
δ= T
10−3
10−6
10−5
10−4
10−3
10−2
tp
T
t
10−1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK6507-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BUK6507-75C
N-channel TrenchMOS FET
8. Revision history
Table 7. Revision history
Document ID
Release date
Data sheet status
BUK6507-75C v.2
Modifications:
20101004
Product data sheet
• Status changed from objective to product.
• Various changes to content.
BUK6507-75C v.1
20100921
Objective data sheet
Change notice
-
-
Supersedes
BUK6507-75C v.1
-
BUK6507-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
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