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PDF BUK6E2R0-30C Data sheet ( Hoja de datos )
| Número de pieza | BUK6E2R0-30C | |
| Descripción | N-channel TrenchMOS intermediate level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK6E2R0-30C
N-channel TrenchMOS intermediate level FET
Rev. 02 — 7 September 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 16
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
ID = 120 A; Vsup ≤ 30 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 30 V
[1] - - 120 A
- - 306 W
- 1.9 2.2 mΩ
- - 1.7 J
1 page  
NXP Semiconductors
BUK6E2R0-30C
N-channel TrenchMOS intermediate level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction see Figure 4
to mounting base
thermal resistance from junction vertical in free air
to ambient
Min Typ Max Unit
- - 0.49 K/W
- 50 - K/W
1
Zth(j-mb)
(K/W)
10-1
δ = 0.5
0.2
0.1
0.05
10-2 0.02
003aae269
P δ = tp
T
single shot
tp t
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK6E2R0-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 September 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
BUK6E2R0-30C
N-channel TrenchMOS intermediate level FET
7. Package outline
Plastic single-ended package (I2PAK); low-profile 3-lead TO-262
SOT226
D1 E
D
b1
L
L1
123
ee
b
A
A1
mounting
base
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b
b1
c
D
max
D1
E
e
L
L1 Q
mm 4.5 1.40 0.85 1.3 0.7
4.1 1.27 0.60 1.0 0.4
11
1.6
1.2
10.3
9.7
2.54
15.0
13.5
3.30
2.79
2.6
2.2
OUTLINE
VERSION
SOT226
IEC
REFERENCES
JEDEC
JEITA
TO-262
EUROPEAN
PROJECTION
Fig 17. Package outline SOT226 (I2PAK)
ISSUE DATE
06-02-14
09-08-25
BUK6E2R0-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 September 2010
© NXP B.V. 2010. All rights reserved.
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