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BUK7Y12-40E PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7Y12-40E
기능 N-channel 40V 12m standard level MOSFET
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BUK7Y12-40E 데이터시트, 핀배열, 회로
BUK7Y12-40E
N-channel 40 V, 12 mΩ standard level MOSFET in LFPAK56
14 February 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175°C rating
True standard level gate with VGS(th) rating of greater than 1 V at 175°C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 15 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 15 A; VDS = 32 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
- - 40 V
- - 52 A
- - 65 W
-
9.3 12
- 5.2 - nC
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BUK7Y12-40E pdf, 반도체, 판매, 대치품
NXP Semiconductors
102
IAL
(A)
10
1
BUK7Y12-40E
N-channel 40 V, 12 mΩ standard level MOSFET in LFPAK56
003aai356
(1)
(2)
(3)
10-1
10-3
10-2
10-1
1
tAL (ms)
10
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time
103
ID
(A)
102
Limit RDSon = VDS / ID
003aai357
tp = 10 us
100 us
10
DC
1 ms
1
10 ms
100 ms
10-1
10-1
1
10
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
102
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 5
Min Typ Max Unit
- - 2.31 K/W
BUK7Y12-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 February 2013
© NXP B.V. 2013. All rights reserved
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BUK7Y12-40E 전자부품, 판매, 대치품
NXP Semiconductors
BUK7Y12-40E
N-channel 40 V, 12 mΩ standard level MOSFET in LFPAK56
50
ID
(A)
40
003aai362
5
VGS(th)
(V)
4
003aah027
max
30 3 typ
20 2 min
10
175°C
Tj = 25°C
0
012345678
VGS (V)
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
1
0
-60 0 60 120 180
Tj (°C)
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
10-1
ID
(A)
10-2
10-3
003aah028
min typ max
10-4
10-5
10-6
0246
VGS(V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
40
RDSon
(mΩ)
30
003aai365
5.5 6
6.5
20 7
8
10
VGS(V) = 10
0
0 20 40 ID(A) 60
Tj = 25 °C; tp = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK7Y12-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 February 2013
© NXP B.V. 2013. All rights reserved
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부품번호상세설명 및 기능제조사
BUK7Y12-40E

N-channel 40V 12m standard level MOSFET

NXP Semiconductors
NXP Semiconductors

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