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PDF BUK961R6-40E Data sheet ( Hoja de datos )
| Número de pieza | BUK961R6-40E | |
| Descripción | N-channel TrenchMOS logic level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK961R6-40E
N-channel TrenchMOS logic level FET
Rev. 2 — 16 May 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This
product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding
environments due to 175 °C rating
True logic level gate with Vgst(th)
rating of greater than 0.5V at 175 °C
1.3 Applications
12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
VGS = 5 V; Tmb = 25 °C; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 5 V; ID = 25 A; Tj = 25 °C;
see Figure 11
VGS = 5 V; ID = 25 A; VDS = 32 V;
see Figure 13; see Figure 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 40 V
[1] - - 120 A
- - 357 W
- 1.35 1.6 mΩ
- 40.9 - nC
1 page  
NXP Semiconductors
BUK961R6-40E
N-channel TrenchMOS logic level FET
104
ID
(A)
103
102
10
1
10-1
10-1
Limit RDSon = VDS / ID
1
DC
10
003aag333
tp =10 μ s
100 μ s
1 ms
10 ms
100 ms
102
VDS (V)
103
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see Figure 5
minimum footprint; mounted on
a printed-circuit board
Min Typ Max Unit
- - 0.42 K/W
- 50 - K/W
1
Zth(j-mb)
(K/W)
10-1
= 0.5
0.2
0.1
003aaf570
0.05
10-2
0.02
P tp
T
single shot
tp
T
t
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration.
BUK961R6-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 May 2012
© NXP B.V. 2012. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BUK961R6-40E
N-channel TrenchMOS logic level FET
9. Revision history
Table 8. Revision history
Document ID
Release date
Data sheet status
BUK961R6-40E v.2
Modifications:
20120516
Product data sheet
• Status changed from objective to product.
• Various changes to content.
BUK961R6-40E v.1 20120404
Objective data sheet
Change notice
-
-
Supersedes
BUK961R6-40E v.1
-
BUK961R6-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 May 2012
© NXP B.V. 2012. All rights reserved.
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