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부품번호 | BUK761R7-40E 기능 |
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기능 | N-channel TrenchMOS standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BUK761R7-40E
N-channel TrenchMOS standard level FET
13 July 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
• AEC Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True standard level gate with VGS(th) rating of greater than 1V at 175 °C
1.3 Applications
• 12 V Automotive systems
• Electric and electro-hydraulic power steering
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 32 V;
Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 40 V
[1] - - 120 A
- - 324 W
- 1.3 1.6 mΩ
- 34.7 - nC
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NXP Semiconductors
103
IAL
(A)
102
10
1
BUK761R7-40E
N-channel TrenchMOS standard level FET
003aah076
(1)
(2)
(3)
10-1
10-3
10-2
10-1
1 tAL(ms) 10
Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
104
ID
(A)
103
102
Limit RDSon= VDS / ID
003aah077
tp =10 µ s
100 µ s
10 1 ms
DC 10 ms
100 ms
1
10-1
10-1
1
10
VDS(V)
102
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
minimum footprint; mounted on a
printed-circuit board
BUK761R7-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 July 2012
Min Typ Max Unit
- - 0.46 K/W
- 50 - K/W
© NXP B.V. 2012. All rights reserved
4 / 13
4페이지 NXP Semiconductors
BUK761R7-40E
N-channel TrenchMOS standard level FET
600
ID
(A)
400
003aah082
10-1
ID
(A)
10-2
10-3
003aah028
min typ max
Tj = 175 °C
200
Tj = 25 °C
10-4
10-5
0
0 2 4 6 VGS(V) 8
10-6
0246
VGS(V)
Fig. 8. Transfer characteristics; drain current as a
Fig. 9. Sub-threshold drain current as a function of
function of gate-source voltage; typical values
gate-source voltage
5
VGS(th)
(V)
4
003aah027
max
10
RDSon
(mΩ)
5
003aah085
5.5
3 typ
2 min
5
6
1 10
0
-60 0 60 120 180
Tj (°C)
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
VGS(V) = 20
0
0 60 120 180 ID(A) 240
Tj = 25 °C; tp = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK761R7-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 July 2012
© NXP B.V. 2012. All rights reserved
7 / 13
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BUK761R7-40E | N-channel TrenchMOS standard level FET | NXP Semiconductors |
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