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부품번호 | BUK95E3R2-40B 기능 |
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기능 | TrenchMOS logic level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
BUK95/96/9E3R2-40B
TrenchMOS™ logic level FET
Rev. 04 — 14 November 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive TrenchMOS™ technology.
1.2 Features
s Very low on-state resistance
s 175 °C rated
s Q101 compliant
s Logic level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V loads
s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 1.2 J
s ID ≤ 100 A
s RDSon = 2.7 mΩ (typ)
s Ptot ≤ 300 W.
2. Pinning information
Table 1: Pinning - SOT78, SOT404, and SOT226 simplified outlines and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
[1] mb
mb
3 source (s)
mb mounting base,
connected to
drain (d)
mb
Symbol
d
g
MBB076
s
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
123
MBK112
SOT404 (D2-PAK)
SOT226 (I2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
Philips Semiconductors
BUK95/96/9E3R2-40B
TrenchMOS™ logic level FET
5. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
Rth(j-mb) thermal resistance from junction to mounting Figure 4
base
Rth(j-a) thermal resistance from junction to ambient
SOT78 (TO-220AB)
vertical in still air
SOT404 (D2-PAK)
minimum footprint; mounted on a
printed-circuit board
SOT226 (I2-PAK)
vertical in still air
5.1 Transient thermal impedance
Min Typ Max Unit
- - 0.5 K/W
- 60 - K/W
- 50 - K/W
- 60 - K/W
1
Zth(j-mb)
(K/W) δ = 0.5
10-1
0.2
0.1
0.05
0.02
10-2
single shot
10-3
10-6
10-5
10-4
10-3
10-2
03nh37
P
δ
=
tp
T
tp
T
t
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 12049
Product data
Rev. 04 — 14 November 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4 of 16
4페이지 Philips Semiconductors
BUK95/96/9E3R2-40B
TrenchMOS™ logic level FET
350
ID
(A)
10
5
280
4
3.8
3.6
210
140
70
0
0
3.4
3.2
3
2.8
2.6
2.4
2.2
2
4
03nh56
Label is VGS (V)
6 8 10
VDS (V)
5
RDSon
(mΩ)
4
3
2
3
03nh55
7 11 15
VGS (V)
Tj = 25 °C; tp = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C; ID = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
8
RDSon
(mΩ)
2.8
6
4
3
3.2
03nh57
Label is VGS (V)
3.4
3.6
3.8
4
5
10
2
a
1.5
1
0.5
03aa27
2
0 70 140 210 280 350
ID (A)
0
-60 0 60 120 180
Tj (°C)
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 12049
Product data
Rev. 04 — 14 November 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
7 of 16
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BUK95E3R2-40B | TrenchMOS logic level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |