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BUK764R3-40B PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK764R3-40B
기능 TrenchMOS logic level FET
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BUK764R3-40B 데이터시트, 핀배열, 회로
BUK75/764R3-40B
TrenchMOS™ standard level FET
Rev. 01 — 09 April 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
Product availability:
BUK754R3-40B in SOT78 (TO-220AB)
BUK764R3-40B in SOT404 (D2-PAK).
1.2 Features
s Very low on-state resistance
s 175 °C rated
s Q101 compliant
s Standard level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V loads
s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S 961 mJ
s ID 75 A
s RDSon = 3.8 m(typ)
s Ptot 254 W.
2. Pinning information
Table 1: Pinning - SOT78 and SOT404 simplified outlines and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
[1]
mb
mb
3 source (s)
mb mounting base,
connected to
drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
Symbol
d
g
MBB076
s




BUK764R3-40B pdf, 반도체, 판매, 대치품
Philips Semiconductors
BUK75/764R3-40B
TrenchMOS™ standard level FET
4. Thermal characteristics
Table 3: Thermal characteristics
Symbol Parameter
Conditions
Rth(j-mb) thermal resistance from junction to
mounting base
Figure 4
Rth(j-a)
thermal resistance from junction to ambient
SOT78 (TO-220AB)
vertical in still air
SOT404 (D2-PAK)
minimum footprint; mounted on a PCB
4.1 Transient thermal impedance
Min Typ Max Unit
- - 0.59 K/W
- - 60 K/W
- - 50 K/W
1
Zth(j-mb)
δ = 0.5
(K/W)
10-1
0.2
0.1
0.05
0.02
10-2
single shot
10-3
10-6
10-5
10-4
10-3
10-2
03nk46
P
δ=
tp
T
tp
T
t
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 11133
Product data
Rev. 01 — 09 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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BUK764R3-40B 전자부품, 판매, 대치품
Philips Semiconductors
BUK75/764R3-40B
TrenchMOS™ standard level FET
400
ID
(A)
20
10
300
8
7.5
03nl78
Label is VGS (V)
7
8
RDSon
(m)
7
03nl77
6.5
200 6
5.5
100 5
4.5
6
5
4
0
0 2 4 6 8 10
VDS (V)
3
5 10 15 20
VGS (V)
Tj = 25 °C; tp = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C; ID = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
9
RDSon
(m)
Label is VGS (V)
6
7
03nl79
7
2
a
1.5
03aa27
1
8
5
10
0.5
20
3
0 100 200 300 ID (A) 400
0
-60 0 60 120 180
Tj (°C)
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 11133
Product data
Rev. 01 — 09 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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BUK764R3-40B

TrenchMOS logic level FET

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