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BUK765R2-40B PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK765R2-40B
기능 N-channel TrenchMOS standard level FET
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BUK765R2-40B 데이터시트, 핀배열, 회로
BUK765R2-40B
N-channel TrenchMOS standard level FET
Rev. 02 — 16 January 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Q101 compliant
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V loads
„ Automotive systems
„ General purpose power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj 25 °C; Tj 175 °C
- - 40 V
ID drain current
VGS = 10 V; Tmb = 25 °C; [1] - - 75 A
see Figure 1; see Figure 3;
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 203 W
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 75 A; Vsup 40 V;
RGS = 50 ; VGS = 10 V;
Tj(init) = 25 °C; unclamped
- - 494 mJ
QGD
gate-drain charge
VGS = 10 V; ID = 25 A;
VDS = 32 V; Tj = 25 °C; see
Figure 14
- 16 - nC
Static characteristics
RDSon drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11;
see Figure 12
- 4.4 5.2 m
[1] Continuous current is limited by package.




BUK765R2-40B pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK765R2-40B
N-channel TrenchMOS standard level FET
150
ID
(A)
100
Capped at 75 A due to package
50
03nj26
120
Pder
(%)
80
40
03na19
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
103
ID
(A)
102
10
Limit RDSon = VDS/ID
Capped at 75 A due to package
DC
03nj24
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
1
10-1
1
10
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK765R2-40B_2
Product data sheet
Rev. 02 — 16 January 2009
© NXP B.V. 2009. All rights reserved.
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BUK765R2-40B 전자부품, 판매, 대치품
NXP Semiconductors
BUK765R2-40B
N-channel TrenchMOS standard level FET
400
ID
(A)
300
20
14
12
10 9.5
9
03nk19
label is VGS (V)
8.5
8
7.5
200
7
6.5
100 6
5.5
5
4.5
0
0 2 4 6 8 10
VDS (V)
18
RDSon
(mΩ)
13
03nk18
8
3
5 10 15 VGS (V) 20
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
101
ID
(A)
102
103
104
03aa35
min typ max
80
gfs
(S)
60
40
03nk16
105
20
106
0246
VGS (V)
0
0 20 40 60 80
ID (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK765R2-40B_2
Product data sheet
Rev. 02 — 16 January 2009
© NXP B.V. 2009. All rights reserved.
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BUK765R2-40B

N-channel TrenchMOS standard level FET

NXP Semiconductors
NXP Semiconductors

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