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PDF PMZ270XN Data sheet ( Hoja de datos )
| Número de pieza | PMZ270XN | |
| Descripción | N-channel TrenchMOS extremely low level FET | |
| Fabricantes | NXP Semiconductors | |
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PMZ270XN
N-channel TrenchMOS extremely low level FET
Rev. 01. — 21 February 2008
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
I Profile 55 % lower than SOT23
I Low on-state resistance
I Leadless package
I Footprint 90 % smaller than SOT23
I Low threshold voltage
I Fast switching
1.3 Applications
I Driver circuits
I DC-to-DC converters
I Load switching in portable appliances
1.4 Quick reference data
I VDS ≤ 20 V
I RDSon ≤ 340 mΩ
I ID ≤ 2.15 A
I Ptot ≤ 2.50 W
2. Pinning information
Table 1.
Pin
1
2
3
Pinning
Description
gate (G)
source (S)
drain (D)
Simplified outline
1
3
2
Transparent
top view
SOT883 (SC-101)
Symbol
DD
GG
mmbbbb007766 SS
1 page  
NXP Semiconductors
PMZ270XN
N-channel TrenchMOS extremely low level FET
6. Characteristics
Table 5. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Static characteristics
V(BR)DSS drain-source breakdown
voltage
VGS(th) gate-source threshold voltage
IDSS drain leakage current
IGSS
RDSon
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot) total gate charge
QGS gate-source charge
QGD
gate-drain charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
tr
turn-on delay time
rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain voltage
Conditions
ID = 10 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 0.25 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
VDS = 20 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±12 V; VDS = 0 V
VGS = 4.5 V; ID = 0.2 A; see Figure 6 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 2.5 V; ID = 0.1 A; see Figure 6 and 8
ID = 1 A; VDS = 10 V; VGS = 4.5 V; see
Figure 11 and 12
VGS = 0 V; VDS = 20 V; f = 1 MHz; see
Figure 14
VDS = 10 V; RL = 10 Ω; VGS = 4.5 V; RG = 6 Ω
IS = 0.3 A; VGS = 0 V; see Figure 13
Min Typ Max Unit
20 - - V
18 - - V
0.5 1
0.35 -
--
1.5 V
-V
1.8 V
- - 1 µA
- - 100 µA
- 10 100 nA
- 270 340 mΩ
- 430 540 mΩ
- 440 520 mΩ
- 0.72 - nC
- 0.18 - nC
- 0.18 - nC
- 34 - pF
- 12 - pF
- 8 - pF
- 5 - ns
- 11 - ns
- 11 - ns
- 6 - ns
- 0.8 1.2 V
PMZ270XN_1
Product data sheet
Rev. 01 — 21 February 2008
© NXP B.V. 2008. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
9. Revision history
Table 6. Revision history
Document ID
Release date
PMZ270XN_1
20080221
PMZ270XN
N-channel TrenchMOS extremely low level FET
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PMZ270XN_1
Product data sheet
Rev. 01 — 21 February 2008
© NXP B.V. 2008. All rights reserved.
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