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부품번호 | PMZB350UPE 기능 |
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기능 | single P-channel Trench MOSFET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 14 페이지수
PMZB350UPE
20 V, single P-channel Trench MOSFET
1 August 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
• Low threshold voltage
• Very fast switching
• Trench MOSFET technology
• 1.8 kV ESD protected
1.3 Applications
• Relay driver
• High-speed line driver
• High-side loadswitch
• Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-8 -
8V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -1.4 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -0.3 A; Tj = 25 °C
resistance
- 330 450 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
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NXP Semiconductors
120
Pder
(%)
80
017aaa123
PMZB350UPE
20 V, single P-channel Trench MOSFET
120
Ider
(%)
80
017aaa124
40 40
0
- 75
- 25
25
75 125 175
Tj (°C)
Fig. 2. Normalized total power dissipation as a
function of junction temperature
0
- 75 - 25
25
75 125 175
Tj (°C)
Fig. 3. Normalized continuous drain current as a
function of junction temperature
-10
ID
(A)
Limit RDSon = VDS/ID
017aaa715
-1
tp = 1 ms
-10-1
DC; Tsp = 25 °C
tp = 10 ms
tp = 100 ms
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
-10-2
0
IDM = single pulse
-1
-10 -102
VDS (V)
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Min Typ Max Unit
[1] -
304 350 K/W
[2] -
150 175 K/W
[3] -
90 103 K/W
PMZB350UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 August 2012
© NXP B.V. 2012. All rights reserved
4 / 14
4페이지 NXP Semiconductors
-3
ID
(A)
-8 V
-4.5 V
-2
-1
-3 V
-2.5 V
017aaa716
VGS = -2.2 V
-1.8 V
-1.4 V
PMZB350UPE
20 V, single P-channel Trench MOSFET
-10 - 3
017aaa143
ID
(A)
-10 - 4
(1) (2) (3)
-10 - 5
0
0 -1 -2 -3 -4
VDS (V)
Tj = 25 °C
Fig. 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
-10 - 6
-0.2 -0.4 -0.6
Tj = 25 °C; VDS = -3 V
(1) minimum values
(2) typical values
(3) maximum values
-0.8 -1.0
VGS (V)
Fig. 8. Sub-threshold drain current as a function of
gate-source voltage
1200
-1.4 V
-1.8 V
017aaa717
-2.2 V
1200
017aaa718
RDSon
(mΩ)
RDSon
(mΩ)
800 800
-2.5 V
-3 V Tj = 150 °C
400
-4.5 V
400
-8 V Tj = 25 °C
0
0 -1
Tj = 25 °C
-2 -3
ID (A)
Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
0
0 -2
ID = -0.2 A
-4 -6
VGS (V)
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMZB350UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 August 2012
© NXP B.V. 2012. All rights reserved
7 / 14
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PMZB350UPE | single P-channel Trench MOSFET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |