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PDF PMV170UN Data sheet ( Hoja de datos )
| Número de pieza | PMV170UN | |
| Descripción | single N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PMV170UN
20 V, single N-channel Trench MOSFET
3 August 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
• Low threshold voltage
• Very fast switching
• Trench MOSFET technology
1.3 Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tamb = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 1 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-8 -
8V
[1] - - 1.5 A
- 140 165 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33 0.25
0.2
0.1
0.05
10 0
0.02
0.01
PMV170UN
20 V, single N-channel Trench MOSFET
017aaa733
1
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa734
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33 0.25
0.2 0.1
0.05
10 0
0.02
0.01
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tamb = 25 °C
VDS = 20 V; VGS = 0 V; Tamb = 150 °C
PMV170UN
All information provided in this document is subject to legal disclaimers.
Product data sheet
3 August 2012
Min Typ Max Unit
20 - - V
0.4 0.7 1
V
- - 1 µA
- - 20 µA
© NXP B.V. 2012. All rights reserved
5 / 14
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NXP Semiconductors
11. Revision history
Table 8. Revision history
Data sheet ID
Release date
PMV170UN v.1
20120803
PMV170UN
20 V, single N-channel Trench MOSFET
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PMV170UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 August 2012
© NXP B.V. 2012. All rights reserved
11 / 14
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| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PMV170UN.PDF ] | |
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