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PDF PMV160UP Data sheet ( Hoja de datos )
| Número de pieza | PMV160UP | |
| Descripción | 1.2A P-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PMV160UP
20 V, 1.2 A P-channel Trench MOSFET
Rev. 2 — 6 December 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
1.8 V RDSon rated
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
Tj = 25 °C
VGS = -4.5 V; Tamb 25 °C
--
-8 -
[1] -
-
-20 V
8V
-1.2 A
RDSon
drain-source on-state VGS = -4.5 V; ID = -1.2 A; Tj = 25 °C
resistance
- 170 210 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G gate
S source
D drain
Simplified outline
3
12
SOT23 (TO-236AB)
Graphic symbol
D
G
S
017aaa257
1 page  
NXP Semiconductors
PMV160UP
20 V, 1.2 A P-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
Min Typ Max Unit
[1] -
325 374 K/W
[2] -
227 260 K/W
- 50 60 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
0.2
0.5
0.25
0.1
0.05
10
0.01
0.02
0
017aaa340
1
10–3
10–2
10–1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W) duty cycle = 1
0.75
102
0.33
0.2
0.5
0.25
0.1
0.05
10
0
0.02
0.01
017aaa341
1
10–3
10–2
10–1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMV160UP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 December 2011
© NXP B.V. 2011. All rights reserved.
5 of 16
5 Page 
NXP Semiconductors
9. Package outline
Plastic surface-mounted package; 3 leads
PMV160UP
20 V, 1.2 A P-channel Trench MOSFET
SOT23
DB
E AX
3
1
e1 bp
e
2
wM B
HE v M A
A
A1
Q
detail X
Lp
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
mm
1.1
0.9
0.1
0.48 0.15
0.38 0.09
3.0
2.8
E
1.4
1.2
e
e1 HE Lp
Q
v
1.9
0.95
2.5
2.1
0.45 0.55
0.15 0.45
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
JEITA
TO-236AB
Fig 18. Package outline SOT23 (TO-236AB)
PMV160UP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 December 2011
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
© NXP B.V. 2011. All rights reserved.
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