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PDF PSMN022-30BL Data sheet ( Hoja de datos )
| Número de pieza | PSMN022-30BL | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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PSMN022-30BL
N-channel 30 V 22.6 mΩ logic level MOSFET in D2PAK
Rev. 1 — 21 March 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switiching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 5 A; Tj = 100 °C;
see Figure 13
VGS = 10 V; ID = 5 A; Tj = 25 °C;
see Figure 12
VGS = 4.5 V; ID = 5 A; VDS = 15 V;
see Figure 14; see Figure 15
VGS = 10 V; Tj(init) = 25 °C; ID = 30 A;
Vsup ≤ 30 V; RGS = 50 Ω; unclamped
Min Typ Max Unit
- - 30 V
- - 30 A
- - 41 W
-55 -
175 °C
- 26.84 31.6 mΩ
- 19.17 22.6 mΩ
- 1.4 - nC
- 4.4 - nC
- - 7 mJ
1 page  
NXP Semiconductors
PSMN022-30BL
N-channel 30 V 22.6 mΩ logic level MOSFET in D2PAK
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
RG gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
QGS(th)
QGS(th-pl)
QGD
VGS(pl)
Ciss
Coss
Crss
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10; see Figure 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 11
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 125 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 5 A; Tj = 25 °C;
see Figure 12
VGS = 10 V; ID = 5 A; Tj = 175 °C;
see Figure 13; see Figure 12
VGS = 10 V; ID = 5 A; Tj = 100 °C;
see Figure 13
VGS = 10 V; ID = 5 A; Tj = 25 °C;
see Figure 12
f = 1 MHz
ID = 5 A; VDS = 15 V; VGS = 10 V;
see Figure 14; see Figure 15
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 5 A; VDS = 15 V; VGS = 4.5 V;
see Figure 14; see Figure 15
ID = 5 A; VDS = 15 V;
see Figure 14; see Figure 15
VDS = 15 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
Min Typ Max Unit
30 - - V
27 - - V
1.3 1.7 2.15 V
0.5 - - V
- - 2.45 V
-
0.3 1
µA
- - 50 µA
- 10 100 nA
- 10 100 nA
- 25.17 29.6 mΩ
-
50.99 60
mΩ
- 26.84 31.6 mΩ
- 19.17 22.6 mΩ
- 2- Ω
- 9 - nC
- 8 - nC
- 4.4 - nC
- 1.6 - nC
- 0.8 - nC
- 0.8 - nC
- 1.4 - nC
- 3- V
- 447 - pF
- 96 - pF
- 61 - pF
PSMN022-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 March 2012
© NXP B.V. 2012. All rights reserved.
5 of 14
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NXP Semiconductors
9. Revision history
Table 8. Revision history
Document ID
Release date
PSMN022-30BL v.1 20120321
PSMN022-30BL
N-channel 30 V 22.6 mΩ logic level MOSFET in D2PAK
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PSMN022-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 March 2012
© NXP B.V. 2012. All rights reserved.
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