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| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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PSMN017-80PS
N-channel 80 V 17 mΩ standard level MOSFET in TO220
Rev. 01 — 11 March 2010
Objective data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A;
VDS = 40 V; see Figure 14
and 15
Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 10 A;
on-state resistance Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 10 A;
Tj = 25 °C; see Figure 13
Min Typ Max Unit
- - 80 V
- - 50 A
- - 103 W
-55 -
175 °C
- 6.3 - nC
- 26.5 - nC
- - 29 mΩ
- 13.7 17 mΩ
1 page  
NXP Semiconductors
PSMN017-80PS
N-channel 80 V 17 mΩ standard level MOSFET in TO220
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10
and 11
ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10
and 11
ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10
and 11
IDSS
IGSS
RDSon
RG
drain leakage current
gate leakage current
drain-source on-state
resistance
internal gate resistance
(AC)
VDS = 80 V; VGS = 0 V; Tj = 25 °C
VDS = 80 V; VGS = 0 V; Tj = 125 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 10 A; Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 13
f = 1 MHz
Dynamic characteristics
QG(tot)
QGS
QGS(th)
total gate charge
gate-source charge
pre-threshold
gate-source charge
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 25 A; VDS = 40 V; VGS = 10 V; see Figure 14
and 15
QGS(th-pl) post-threshold
gate-source charge
QGD
VGS(pl)
gate-drain charge
gate-source plateau
voltage
ID = 25 A; VDS = 40 V; see Figure 15
Ciss
Coss
Crss
input capacitance
output capacitance
reverse transfer
capacitance
VDS = 40 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
see Figure 16
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VDS = 40 V; RL = 1.6 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 17
trr reverse recovery time IS = 50 A; dIS/dt = 100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 40 V
Min
72
80
1
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[1] Tested to JEDEC standards where applicable.
PSMN017-80PS_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 11 March 2010
Typ Max Unit
--V
--V
--V
- 4.8 V
34V
-2
- 38
1 100
1 100
- 29
13.7 17
1-
µA
µA
nA
nA
mΩ
mΩ
Ω
22 -
26.5 -
7.7 -
4.6 -
3-
6.3 -
4.7 -
1573
154
88
-
-
-
14.3 -
12.3 -
27 -
7.7 -
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
0.8 1.2
41.6 -
55.5 -
V
ns
nC
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
PSMN017-80PS
N-channel 80 V 17 mΩ standard level MOSFET in TO220
8. Revision history
Table 7. Revision history
Document ID
Release date
PSMN017-80PS_1
20100311
Data sheet status
Objective data sheet
Change notice
-
Supersedes
-
PSMN017-80PS_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 11 March 2010
© NXP B.V. 2010. All rights reserved.
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