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PSMN011-30YLC 데이터시트 PDF




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부품번호 PSMN011-30YLC 기능
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PSMN011-30YLC 데이터시트, 핀배열, 회로
PSMN011-30YLC
N-channel 30 V 11.6 mlogic level MOSFET in LFPAK using
NextPower technology
Rev. 3 — 24 October 2011
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High reliability Power SO8 package,
qualified to 175°C
Low parasitic inductance and
resistance
Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high
system efficiencies at low and high
loads
1.3 Applications
DC-to-DC converters
Load switching
Synchronous buck regulator
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
Conditions
25 °C Tj 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
RDSon
drain-source on-state resistance VGS = 4.5 V; ID = 10 A; Tj = 25 °C;
see Figure 12
VGS = 10 V; ID = 10 A; Tj = 25 °C;
see Figure 12
Dynamic characteristics
QGD gate-drain charge
VGS = 4.5 V; ID = 10 A; VDS = 15 V; see
Figure 14; see Figure 15
QG(tot)
total gate charge
VGS = 4.5 V; ID = 10 A; VDS = 15 V; see
Figure 14; see Figure 15
Min Typ Max Unit
- - 30 V
- - 37 A
- - 29 W
-55 -
175 °C
- 12.3 14.5 m
- 9.9 11.6 m
- 1.4 - nC
- 4.9 - nC




PSMN011-30YLC pdf, 반도체, 판매, 대치품
NXP Semiconductors
PSMN011-30YLC
N-channel 30 V 11.6 mlogic level MOSFET in LFPAK using NextPower technology
103
ID
(A)
102
10
1
10-1
10-1
Limit RDSon = VDS/ ID
DC
1 10
003aag217
tp =10 μ s
100 μs
1 ms
10 ms
100 ms
VDS(V)
102
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN011-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
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PSMN011-30YLC 전자부품, 판매, 대치품
NXP Semiconductors
PSMN011-30YLC
N-channel 30 V 11.6 mlogic level MOSFET in LFPAK using NextPower technology
Table 6.
Symbol
Qoss
Characteristics …continued
Parameter
output charge
Source-drain diode
VSD source-drain voltage
trr reverse recovery time
Qr recovered charge
ta reverse recovery rise time
tb reverse recovery fall time
Conditions
VGS = 0 V; VDS = 15 V; f = 1 MHz;
Tj = 25 °C
IS = 10 A; VGS = 0 V; Tj = 25 °C;
see Figure 17
IS = 10 A; dIS/dt = -100 A/µs;
VGS = 0 V; VDS = 15 V
VGS = 0 V; IS = 10 A;
dIS/dt = -100 A/µs; VDS = 15 V;
see Figure 18
Min Typ Max Unit
- 3.8 - nC
- 0.85 1.1 V
- 17 - ns
- 7 - nC
- 10 - ns
- 7 - ns
40
ID 10 4.5 3.5
(A)
30
003aag219
VGS(V) = 3.0
2.8
20
2.6
10
2.4
2.2
0
0 1 2 3 4 VDS(V) 5
40
RDSon
(mΩ)
30
003aag220
20
10
0
0 4 8 12 16 20
VGS(V)
Fig 6. Output characteristics; drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
PSMN011-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
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