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부품번호 | C2873 기능 |
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기능 | NPN Transistor - 2SC2873 | ||
제조업체 | Toshiba Semiconductor | ||
로고 | |||
전체 5 페이지수
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2873
Power Amplifier Applications
Power Switching Applications
2SC2873
Unit: mm
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
• High-speed switching time: tstg = 1.0 μs (typ.)
• Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
• Complementary to 2SA1213
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
PC
(Note 1)
Tj
Tstg
50
50
5
2
0.4
500
1000
150
−55 to 150
V
V
V
A
A
mW
°C
°C
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2012-10-16
IC – VBE
2.0
Common emitter
VCE = 2 V
1.5
Ta = 100°C
25 −55
1.0
0.5
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
1.2
(1)
1.0
0.8
PC – Ta
(1) Mounted on a ceramic
substrate (250 mm2 × 0.8 t)
(2) No heat sink
0.6
(2)
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
2SC2873
5000
3000
Safe Operating Area
IC max (pulse)*
IC max (continuous)
1000
500
300
100
100 ms*
1 S*
DC operation
Ta = 25°C
1 ms*
10 ms*
50
*: Single no repetitive pulse
30 Ta = 25°C
Curves must be derated linearly
10
5
0.1
with increase in temperature
Tested without a substrate
0.3 1
3
VCEO max
10 30
Collector-emitter voltage VCE (V)
100
4 2012-10-16
4페이지 | |||
구 성 | 총 5 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
C2873 | NPN Transistor - 2SC2873 | Toshiba Semiconductor |
C2874 | KTC2874 | KEC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |