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부품번호 | PMZ350XN 기능 |
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기능 | N-channel TrenchMOS standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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PMZ350XN
N-channel TrenchMOS standard level FET
Rev. 01 — 21 February 2008
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
I Profile 55 % lower than SOT23
I Low on-state resistance
I Leadless package
I Footprint 90 % smaller than SOT23
I Low threshold voltage
I fast switching
1.3 Applications
I Driver circuits
I DC-to-DC converters
I Load switching in portable appliances
1.4 Quick reference data
I VDS ≤ 30 V
I RDSon ≤ 420 mΩ
I ID ≤ 1.87 A
I Ptot ≤ 2.50 W
2. Pinning information
Table 1. Pinning
Pin Description
1 gate (G)
2 source (S)
3 drain (D)
Simplified outline
1
3
2
Transparent
top view
SOT833 (SC-101)
Symbol
D
G
mbb076 S
NXP Semiconductors
PMZ350XN
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4. Thermal characteristics
Symbol Parameter
Rth(j-sp) thermal resistance from junction to solder point
Rth(j-a) thermal resistance from junction to ambient
[1] Mounted on a printed-circuit board; vertical in still air.
Conditions
see Figure 4
-
Min Typ Max Unit
- - 50 K/W
[1] - 670 - K/W
102 003aab831
Zth(j-sp)
(K/W) δ = 0.5
0.2
10
0.1
0.05
0.02
single pulse
1
10-4
10-3
10-2
10-1
P δ = tp
T
tp
T
t
1 10
tp (s)
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
PMZ350XN_1
Product data sheet
Rev. 01 — 21 February 2008
© NXP B.V. 2008. All rights reserved.
4 of 13
4페이지 NXP Semiconductors
PMZ350XN
N-channel TrenchMOS standard level FET
2
VGS (th)
(V)
1.5
1
0.5
03al82
max
typ
min
10−3
ID
(A)
10−4
03an65
min typ max
10−5
0
−60
0
60 120 180
Tj (°C)
ID = 0.25 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
10−6
0
0.4 0.8 1.2 1.6
VGS (V)
Tj = 25 °C; VDS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
5
VGS
(V)
4
ID = 1 A
Tj = 25 °C
VDS = 15 V
3
03ao05
2
1
0
0 0.2 0.4 0.6 0.8
QG (nC)
ID = 1 A; VDS = 15 V
Fig 11. Gate-source voltage as a function of gate
charge; typical values
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 12. Gate charge waveform definitions
PMZ350XN_1
Product data sheet
Rev. 01 — 21 February 2008
© NXP B.V. 2008. All rights reserved.
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PMZ350XN | N-channel TrenchMOS standard level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |