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부품번호 | NX3008NBKMB 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 15 페이지수
NX3008NBKMB
30 V, single N-channel Trench MOSFET
Rev. 1 — 11 May 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Very fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
Ultra thin package profile with
0.37 mm height
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 350 mA; Tj = 25 °C
[1]
Min Typ Max Unit
- - 30 V
-8 -
8V
- - 530 mA
- 1 1.4 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors
NX3008NBKMB
30 V, single N-channel Trench MOSFET
10
ID
(A)
1
limit RDSon = VDS / ID
aaa-002631
10-1
(1)
(2)
(3)
(4)
(5)
10-2
10-1
1
10 102
VDS (V)
IDM is single pulse
(1) tp = 1 ms
(2) DC; Tsp = 25 °C
(3) tp = 10 ms
(4) tp = 100 ms
(5) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
Min Typ Max Unit
[1] -
305 360 K/W
[2] -
150 175 K/W
- - 40 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NX3008NBKMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 May 2012
© NXP B.V. 2012. All rights reserved.
4 of 15
4페이지 NXP Semiconductors
NX3008NBKMB
30 V, single N-channel Trench MOSFET
0.4
ID
(A)
0.3
4.5 V
2.5 V
0.2
001aao267
2V
1.75 V
10-3
ID
(A)
10-4
001aao268
(1) (2) (3)
10-5
0.1 1.5 V
0.0
0
1
Tj = 25 °C
VGS = 1.25 V
234
VDS (V)
Fig 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
10-6
0.0 0.5 1.0 1.5
VGS (V)
Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 8. Subthreshold drain current as a function of
gate-source voltage
6
RDS (on)
(Ω)
4
(1)
(2)
001aao269
(3)
6
RDS (on)
(Ω)
4
001aao270
2 (4) 2
(5)
(6)
(1)
(2)
0
0.0 0.1 0.2 0.3 0.4
ID (A)
Tj = 25 °C
(1) VGS = 1.5 V
(2) VGS = 1.75 V
(3) VGS = 2.0 V
(4) VGS = 2.25 V
(5) VGS = 2.5 V
(6) VGS = 4.5 V
Fig 9. Drain-source on-state resistance as a function
of drain current; typical values
0
012345
VGS (V)
ID = 400 mA
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
NX3008NBKMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 May 2012
© NXP B.V. 2012. All rights reserved.
7 of 15
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |