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PDF PMZ1000UN Data sheet ( Hoja de datos )
| Número de pieza | PMZ1000UN | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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PMZ1000UN
N-channel TrenchMOS standard level FET
Rev. 2 — 17 September 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Fast switching
Low conduction losses due to low
on-state resistance
Saves PCB space due to small footprint
(90 % smaller than SOT23)
Suitable for use in compact designs due
to low profile (55 % lower than SOT23)
1.3 Applications
Driver circuits
Switching in portable appliances
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
25 °C ≤ Tj ≤ 150 °C
Tamb = 25 °C; VGS = 10 V;
see Figure 1
Tamb = 25 °C; see Figure 2
VGS = 4.5 V; ID = 0.2 A;
Tj = 25 °C; see Figure 8
Min Typ Max Unit
- - 30 V
- - 480 mA
- - 350 mW
- - 1Ω
1 page  
NXP Semiconductors
PMZ1000UN
N-channel TrenchMOS standard level FET
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Static characteristics
V(BR)DSS drain-source breakdown
voltage
VGS(th) gate-source threshold voltage
IDSS drain leakage current
IGSS
RDSon
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot) total gate charge
QGS gate-source charge
QGD gate-drain charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain voltage
Conditions
ID = 10 μA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 0.25 mA; VDS = VGS; see Figure 6 and 7
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±8 V; VDS = 0 V
VGS = 4.5 V; ID = 0.2 A; see Figure 8
Tj = 25 °C
Tj = 150 °C
VGS = 2.5 V; ID = 0.1 A; Figure 8
VGS = 1.8 V; ID = 0.075 A; Figure 8
ID = 1 A; VDS = 15 V; VGS = 4.5 V;
see Figure 9 and 10
VDS = 25 V; VGS = 0 V; f = 1 MHz;
see Figure 11
VDS = 15 V; RL = 15 Ω; VGS = 10 V;
RG(ext) = 6 Ω
IS = 0.3 A; VGS = 0 V; see Figure 11
Min Typ Max Unit
30 - - V
27 - - V
0.45 0.7
0.25 -
--
0.95 V
-V
1.15 V
- - 1 μA
- - 100 μA
- 10 100 nA
- - 1Ω
- - 1.5 Ω
- - 1.1 Ω
- - 1.4 Ω
- 0.89 - nC
- 0.1 - nC
- 0.2 - nC
- 43 - pF
- 7.7 - pF
- 4.8 - pF
- 4 - ns
- 7.5 - ns
- 18 - ns
- 4.5 - ns
- 0.76 1.2 V
PMZ1000UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 September 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
PMZ1000UN
N-channel TrenchMOS standard level FET
10. Revision history
Table 8. Revision history
Document ID
Release date Data sheet status
PMZ1000UN v.2
Modifications:
20100917
Product data sheet
• Modifications of thermal parameters
• Section 11 “Legal information”: updated
PMZ1000UN_1
20100224
Product data sheet
Change notice
-
Supersedes
PMZ1000UN_1
--
PMZ1000UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 September 2010
© NXP B.V. 2010. All rights reserved.
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