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부품번호 | PMT29EN 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 15 페이지수
PMT29EN
30 V, 6 A N-channel Trench MOSFET
Rev. 1 — 31 August 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 6 A; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-20 -
20 V
[1] - - 6 A
- 24 29 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning information
Symbol Description
G gate
D drain
S source
D drain
Simplified outline
4
123
SOT223 (SC-73)
Graphic symbol
D
G
S
017aaa253
NXP Semiconductors
PMT29EN
30 V, 6 A N-channel Trench MOSFET
102
ID
(A)
10
1
10–1
Limit RDSon = VDS/ID
017aaa319
(1)
(2)
(3)
(4)
(5)
(6)
10–2
10–1
1
10 102
VDS (V)
IDM = single pulse
(1) tp = 100 µs
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 °C
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 6 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
Min Typ Max Unit
[1] -
131 151 K/W
[2] -
62 71 K/W
- 8 15 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMT29EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 31 August 2011
© NXP B.V. 2011. All rights reserved.
4 of 15
4페이지 NXP Semiconductors
PMT29EN
30 V, 6 A N-channel Trench MOSFET
100
RDSon
(mΩ)
80
(1)
(2)
(3)
(4)
017aaa323
(5)
200
RDSon
(mΩ)
150
017aaa324
60
100
40 (6)
(7)
(8) 50
(1)
20
0
2 10 18 26
ID (A)
Tj = 25 °C
(1) VGS = 2.6 V
(2) VGS = 2.8 V
(3) VGS = 3.0 V
(4) VGS = 3.2 V
(5) VGS = 3.6 V
(6) VGS = 4.0 V
(7) VGS = 4.5 V
(8) VGS = 10.0 V
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
0
02
ID = 6 A
(1) Tj = 150 °C
(2) Tj = 25 °C
4
(2)
68
VGS (V)
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
24
ID
(A)
16
017aaa325
(1) (2)
1.6
a
1.4
1.2
017aaa328
8
(2) (1)
1.0
0.8
0
01234
VGS (V)
VDS > ID × RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.6
–60
0
60 120 180
Tj (°C)
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
PMT29EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 31 August 2011
© NXP B.V. 2011. All rights reserved.
7 of 15
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