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Número de pieza | NX3020NAKW | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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30 V, 180 mA N-channel Trench MOSFET
29 October 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Very fast switching
• Trench MOSFET technology
• ESD protection
• Low threshold voltage
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - 30 V
VGS gate-source voltage
-20 -
20 V
ID
drain current
VGS = 10 V; Tamb = 25 °C
[1] - - 180 mA
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 100 mA; Tj = 25 °C
resistance
- 2.7 4.5 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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1 page NXP Semiconductors
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
103 017aaa683
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
102 0.2
0.25
0.1
0.05
0.02
0 0.01
10
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa684
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
102
0.2
0.25
0.1
0.05
0.02
0 0.01
10
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 1 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 150 °C
NX3020NAKW
All information provided in this document is subject to legal disclaimers.
Product data sheet
29 October 2013
Min Typ Max Unit
30 - - V
0.8 1.2 1.5 V
- - 1 µA
- - 10 µA
© NXP N.V. 2013. All rights reserved
5 / 15
5 Page NXP Semiconductors
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
13. Soldering
2.65
1.85
1.325
2.35
0.6
(3×)
2
3
1
1.3
0.5
(3×)
0.55
(3×)
Fig. 19. Reflow soldering footprint for SC-70 (SOT323)
4.6
1.425
(3×)
2.575
3.65 2.1
Fig. 20. Wave soldering footprint for SC-70 (SOT323)
1.8
09
(2×)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot323_fr
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot323_fw
NX3020NAKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2013
© NXP N.V. 2013. All rights reserved
11 / 15
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet NX3020NAKW.PDF ] |
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