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| Número de pieza | PSMN1R1-30PL | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
2 April 2014
Product data sheet
1. General description
Logic level N-channel MOSFET in TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
• High efficiency due to low switching and conduction losses
• Suitable for logic level gate drive sources
3. Applications
• DC-to-DC converters
• Load switiching
• Motor control
• Server power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Tj junction temperature
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 4.5 V; ID = 75 A; VDS = 15 V;
Fig. 14; Fig. 15
Min Typ Max Unit
- - 30 V
[1] - - 120 A
- - 338 W
-55 -
175 °C
[2] -
-
1.1 1.3 mΩ
1.5 1.8 mΩ
- 37 - nC
- 118 - nC
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NXP Semiconductors
PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
Symbol
Rth(j-a)
Parameter
thermal resistance
from junction to
ambient
Conditions
Vertical in free air
Min Typ Max Unit
- 60 - K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
10-1
0.2
0.1
0.05
10-2 0.02
003aaf772
P
δ=
tp
T
single shot
tp t
10-3
T
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 10; Fig. 11
ID = 2 mA; VDS = VGS; Tj = 175 °C;
Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 11
IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 175 °C
IGSS gate leakage current VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
Min Typ Max Unit
30 - - V
27 - - V
1.3 1.7 2.2 V
0.5 - - V
- - 2.5 V
-
-
-
-
[1] -
0.02 10
250 500
10 100
10 100
1.1 1.3
µA
µA
nA
nA
mΩ
PSMN1R1-30PL
Product data sheet
All information provided in this document is subject to legal disclaimers.
2 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 14
5 Page 
NXP Semiconductors
PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
11. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
EA
p A1
q mounting
D1 base
D
L1(1)
b1(2)
L (3×)
b2(2)
(2×)
L2(1)
1 23
ee
b(3×)
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1(2) b2(2) c
D D1 E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7 1.40 0.9
4.1 1.25 0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
JEITA
EUROPEAN
PROJECTION
SOT78
3-lead TO-220AB
SC-46
ISSUE DATE
08-04-23
08-06-13
Fig. 18. Package outline TO-220AB (SOT78)
PSMN1R1-30PL
Product data sheet
All information provided in this document is subject to legal disclaimers.
2 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 14
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