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부품번호 | BUK752R3-40C 기능 |
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기능 | N-channel TrenchMOS standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 14 페이지수
BUK752R3-40C
N-channel TrenchMOS standard level FET
Rev. 03 — 26 January 2009
Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
AEC Q101 compliant
Avalanche robust
Suitable for standard level gate drive
Suitable for thermally demanding
environment up to 175°C rating
1.3 Applications
12V Motor, lamp and solenoid loads
High performance automotive power
systems
High performance Pulse Width
Modulation applications
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Dynamic characteristics
QGD gate-drain charge
Static characteristics
RDSon drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source avalanche
energy
Conditions
Min Typ Max Unit
Tj ≥ 25 °C; Tj ≤ 175 °C
- - 40 V
VGS = 10 V; Tmb = 25 °C; [1] - - 100 A
see Figure 1; see Figure 3; [2]
Tmb = 25 °C; see Figure 2
- - 333 W
VGS = 10 V; ID = 25 A;
VDS = 32 V; see Figure 15
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12;
see Figure 13
- 67 - nC
- 1.96 2.3 mΩ
ID = 100 A; Vsup ≤ 40 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
- - 1.2 J
[1] Refer to document 9397 750 12572 for further information.
[2] Continuous current is limited by package.
NXP Semiconductors
300
ID
(A)
200
003aab004
BUK752R3-40C
N-channel TrenchMOS standard level FET
120
Pder
(%)
80
03aa16
100
(1)
40
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
104
ID
(A)
103
limit RDSon = VDS/ID
102 (1)
10
1
10−1
10−1
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aab028
DC
10
δ = 10 μs
100 μs
1 ms
10 ms
100 ms
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK752R3-40C_3
Product data sheet
Rev. 03 — 26 January 2009
© NXP B.V. 2009. All rights reserved.
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BUK752R3-40C
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
VGSth
gate-source threshold
voltage
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
IDSS drain leakage current
Dynamic characteristics
QG(tot)
QGS
QGD
VGS(pl)
total gate charge
gate-source charge
gate-drain charge
gate-source plateau
voltage
Ciss
Coss
Crss
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS internal source
inductance
Source-drain diode
VSD source-drain voltage
trr reverse recovery time
Qr recovered charge
BUK752R3-40C_3
Product data sheet
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C; see
Figure 10; see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C; see
Figure 10; see Figure 11
ID = 1 mA; VDS = VGS; Tj = 175 °C; see
Figure 10; see Figure 11
VDS = 40 V; VGS = 0 V; Tj = 25 °C
VDS = 0 V; VGS = 20 V; Tj = 25 °C
VDS = 0 V; VGS = -20 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C; see
Figure 12; see Figure 13
VGS = 10 V; ID = 25 A; Tj = 25 °C; see
Figure 12; see Figure 13
VDS = 40 V; VGS = 0 V; Tj = 175 °C
ID = 25 A; VDS = 32 V; VGS = 10 V; see
Figure 15
ID = 25 A; VDS = 32 V; see Figure 15
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω
from drain lead 6 mm from package to
centre of die
from contact screw on mounting base to
centre of die
from source lead to source bonding pad
IS = 25 A; VGS = 0 V; Tj = 25 °C; see
Figure 14
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 30 V
Rev. 03 — 26 January 2009
Min Typ Max Unit
40 - - V
36 - - V
234V
- - 4.4 V
1- - V
-
0.02 1
µA
- 2 100 nA
- 2 100 nA
- - 4.26 mΩ
-
1.96 2.3
mΩ
- - 500 µA
- 175 - nC
- 49 - nC
- 67 - nC
- 5- V
- 8492 11323 pF
- 1606 1927 pF
- 1101 1508 pF
- 65 - ns
- 133 - ns
- 146 - ns
- 119 - ns
- 4.5 - nH
- 3.5 - nH
- 7.5 - nH
- 0.85 1.2 V
- 75 - ns
- 57 - nC
© NXP B.V. 2009. All rights reserved.
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부품번호 | 상세설명 및 기능 | 제조사 |
BUK752R3-40C | N-channel TrenchMOS standard level FET | NXP Semiconductors |
BUK752R3-40C | N-channel TrenchMOS standard level FET | NXP Semiconductors |
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