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BUK768R1-40E PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK768R1-40E
기능 N-channel TrenchMOS standard level FET
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BUK768R1-40E 데이터시트, 핀배열, 회로
BUK768R1-40E
N-channel TrenchMOS standard level FET
Rev. 1.1 — 10 July 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding
environments due to 175 °C rating
True standard level gate with VGS(th)
rating of greater than 1V at 175 °C
1.3 Applications
12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage
ID drain current
Tj 25 °C; Tj 175 °C
VGS = 10 V; Tmb = 25 °C;
see Figure 1
- - 40 V
[1] - - 75 A
Ptot total power dissipation
Static characteristics
Tmb = 25 °C; see Figure 2
- - 96 W
RDSon
drain-source on-state resistance VGS = 10 V; ID = 20 A; Tj = 25 °C;
see Figure 11
-
5.6 7.2 m
Dynamic characteristics
QGD gate-drain charge
VGS = 10 V; ID = 20 A;
VDS = 32 V; see Figure 13;
see Figure 14
- 7.4 - nC
[1] Continuous current is limited by package.




BUK768R1-40E pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK768R1-40E
N-channel TrenchMOS standard level FET
103
IAL
(A)
102
10
1
10-1
10-3
10-2
10-1
003aah166
(1)
(2)
(3)
1 tAL(ms) 10
Fig 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
103
ID
(A)
102
10
Limit RDSon = VDS/ ID
DC
003aah167
tp =10 μ s
100 μ s
1 ms
1
10 ms
100 ms
10-1
10-1 1 10 102
VDS(V)
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK768R1-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.1 — 10 July 2012
© NXP B.V. 2012. All rights reserved.
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BUK768R1-40E 전자부품, 판매, 대치품
NXP Semiconductors
BUK768R1-40E
N-channel TrenchMOS standard level FET
003aah169
160
ID VGS(V) = 20 10 7
(A)
120
6
80
5.5
20
RDSon
(mΩ)
15
10
003aah170
40
0
01
Tj = 25 °C; tp = 300 μs
5
4.5
4
VDS(V)
2
5
0
0 5 10 15 VGS(V) 20
Fig 6. Output characteristics; drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
180
ID
(A)
120
003aah172
10-1
ID
(A)
10-2
10-3
003aah028
min typ max
Tj = 175 °C
60
Tj = 25 °C
10-4
10-5
0
0 2 4 6 VGS(V) 8
10-6
0246
VGS(V)
Fig 8. Transfer characteristics; drain current as a
Fig 9. Sub-threshold drain current as a function of
function of gate-source voltage; typical values
gate-source voltage
BUK768R1-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.1 — 10 July 2012
© NXP B.V. 2012. All rights reserved.
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BUK768R1-40E

N-channel TrenchMOS standard level FET

NXP Semiconductors
NXP Semiconductors

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