|
|
PDF BUK626R2-40C Data sheet ( Hoja de datos )
| Número de pieza | BUK626R2-40C | |
| Descripción | N-channel TrenchMOS intermediate level FET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BUK626R2-40C (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
BUK626R2-40C
N-channel TrenchMOS intermediate level FET
Rev. 1 — 12 July 2011
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard and logic level
gate drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot total power Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 15 A;
on-state resistance Tj = 25 °C; see Figure 11
Min Typ Max Unit
- - 40 V
[1] - - 90 A
- - 128 W
- 5.2 6.2 mΩ
1 page  
NXP Semiconductors
BUK626R2-40C
N-channel TrenchMOS intermediate level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
Conditions
see Figure 4
Min Typ Max Unit
- - 1.17 K/W
10
Zth(j-mb)
(K/W)
1
δ = 0.5
10-1
0.2
0.1
0.05
10-2
0.02
single shot
10-3
10-6
10-5
10-4
10-3
10-2
003aae418
P δ = tp
T
tp
T
10-1 tp (s)
t
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK626R2-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 July 2011
© NXP B.V. 2011. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
8. Revision history
Table 7. Revision history
Document ID
Release date
BUK626R2-40C v.1 20110712
BUK626R2-40C
N-channel TrenchMOS intermediate level FET
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
BUK626R2-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 July 2011
© NXP B.V. 2011. All rights reserved.
11 of 14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet BUK626R2-40C.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BUK626R2-40C | N-channel TrenchMOS intermediate level FET | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |