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부품번호 | BUK6218-40C 기능 |
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기능 | N-channel TrenchMOS intermediate level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 14 페이지수
BUK6218-40C
N-channel TrenchMOS intermediate level FET
Rev. 1 — 4 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using TrenchMOS technology. This product has been designed and
qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard and logic level
gate drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoids
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot
total power
see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 10 A;
Tmb = 25 °C; see Figure 11
Min Typ Max Unit
- - 40 V
- - 42 A
- - 60 W
- 13.5 16 mΩ
NXP Semiconductors
60
ID
(A)
40
003aae856
BUK6218-40C
N-channel TrenchMOS intermediate level FET
120
Pder
(%)
80
03aa16
20 40
0
0 50 100 150 200
Tmb(°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
103
ID
(A)
102
10
1
Limit RDSon= VDS/ ID
DC
003aae846
tp =10 μ s
100 μ s
1 ms
10 ms
100 ms
10-1
10-1 1 10 102
V DS(V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK6218-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
4 of 14
4페이지 NXP Semiconductors
BUK6218-40C
N-channel TrenchMOS intermediate level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V
Min Typ Max Unit
- 0.9 1.2 V
- 34 - ns
- 35.9 - nC
003aae842
003aae843
40 80
gfs
ID 10.0
6.0
(S) (A)
30 60 VGS (V) = 5
20
10
0
0 10 20 30 ID (A) 40
4.5
40
4.0
20 3.8
3.6
3.4
3.2
0
0 2.5 5 7.5 10
VDS (V)
Fig 5. Forward transconductance as a function of
drain current; typical values
003aae844
40
ID
(A)
30
20
Tj = 175 °C
Tj = 25 °C
10
0
0 2 4 VGS(V) 6
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
50
RDSon
(mΩ)
40
003aae845
30
20
10
0
0 5 10 15 VGS(V) 20
Fig 7. Transfer characteristics: drain current as a
Fig 8. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
BUK6218-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
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