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BUK6218-40C 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 BUK6218-40C은 전자 산업 및 응용 분야에서
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부품번호 BUK6218-40C 기능
기능 N-channel TrenchMOS intermediate level FET
제조업체 NXP Semiconductors
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BUK6218-40C 데이터시트, 핀배열, 회로
BUK6218-40C
N-channel TrenchMOS intermediate level FET
Rev. 1 — 4 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using TrenchMOS technology. This product has been designed and
qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Suitable for standard and logic level
gate drive sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V Automotive systems
„ Electric and electro-hydraulic power
steering
„ Motors, lamps and solenoids
„ Start-Stop micro-hybrid applications
„ Transmission control
„ Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot
total power
see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 10 A;
Tmb = 25 °C; see Figure 11
Min Typ Max Unit
- - 40 V
- - 42 A
- - 60 W
- 13.5 16 m




BUK6218-40C pdf, 반도체, 판매, 대치품
NXP Semiconductors
60
ID
(A)
40
003aae856
BUK6218-40C
N-channel TrenchMOS intermediate level FET
120
Pder
(%)
80
03aa16
20 40
0
0 50 100 150 200
Tmb(°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
103
ID
(A)
102
10
1
Limit RDSon= VDS/ ID
DC
003aae846
tp =10 μ s
100 μ s
1 ms
10 ms
100 ms
10-1
10-1 1 10 102
V DS(V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK6218-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
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BUK6218-40C 전자부품, 판매, 대치품
NXP Semiconductors
BUK6218-40C
N-channel TrenchMOS intermediate level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V
Min Typ Max Unit
- 0.9 1.2 V
- 34 - ns
- 35.9 - nC
003aae842
003aae843
40 80
gfs
ID 10.0
6.0
(S) (A)
30 60 VGS (V) = 5
20
10
0
0 10 20 30 ID (A) 40
4.5
40
4.0
20 3.8
3.6
3.4
3.2
0
0 2.5 5 7.5 10
VDS (V)
Fig 5. Forward transconductance as a function of
drain current; typical values
003aae844
40
ID
(A)
30
20
Tj = 175 °C
Tj = 25 °C
10
0
0 2 4 VGS(V) 6
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
50
RDSon
(mΩ)
40
003aae845
30
20
10
0
0 5 10 15 VGS(V) 20
Fig 7. Transfer characteristics: drain current as a
Fig 8. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
BUK6218-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
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부품번호상세설명 및 기능제조사
BUK6218-40C

N-channel TrenchMOS intermediate level FET

NXP Semiconductors
NXP Semiconductors

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