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부품번호 | BUK953R2-40B 기능 |
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기능 | N-channel TrenchMOS logic level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BUK953R2-40B
N-channel TrenchMOS logic level FET
17 April 2014
Product data sheet
1. General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
• AEC Q101 compliant
• Low conduction losses due to low on-state resistance
• Suitable for logic level gate drive sources
• Suitable for thermally demanding environments due to 175 °C rating
3. Applications
• 12 V loads
• Automotive systems
• General purpose power switching
• Motors, lamps and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2; Fig. 3
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 25 °C;
Fig. 11; Fig. 12
Dynamic characteristics
QGD
gate-drain charge
VGS = 5 V; ID = 25 A; VDS = 32 V;
Tj = 25 °C; Fig. 13
[1]
Min Typ Max Unit
- - 40 V
- - 100 A
- - 300 W
- 2.4 2.8 mΩ
- 2.7 3.2 mΩ
- 37 - nC
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NXP Semiconductors
120
Pder
(%)
80
03na19
40
0
0 50 100 150 200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
BUK953R2-40B
N-channel TrenchMOS logic level FET
250
ID
(A)
200
03nh38
150
100
50 Capped at 100 A due to package
0
0 50 100 150 200
Tmb (°C)
Fig. 2. Continuous drain current as a function of
mounting base temperature
104
ID
(A)
103
102
10
Limit RDSon = VDS / ID
Capped at 100 A due to package
DC
03nh36
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
1
10- 1
1
10
VDS (V)
102
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK953R2-40B
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
4 / 13
4페이지 NXP Semiconductors
BUK953R2-40B
N-channel TrenchMOS logic level FET
350
ID
(A)
10
5
280
4
3.8
3.6
210 3.4
03nh56
Label is VGS (V)
5
RDSon
(mΩ)
4
03nh55
3.2
140
3
3
2.8
70
2.6
2.4
0 2.2
0 2 4 6 8 10
VDS (V)
2
3 7 11 15
VGS (V)
Fig. 5. Output characteristics: drain current as a
Fig. 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10- 1
ID
(A)
10- 2
10- 3
10- 4
10- 5
03ng53
min typ max
200
gfs
(S)
150
100
50
03nh53
10- 6
0123
VGS (V)
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
0
0 20 40 60
ID (A)
Fig. 8. Forward transconductance as a function of
drain current; typical values
BUK953R2-40B
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
7 / 13
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BUK953R2-40B | N-channel TrenchMOS logic level FET | NXP Semiconductors |
BUK953R2-40E | N-channel TrenchMOS logic level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |