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BUK753R1-40E 데이터시트 PDF




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부품번호 BUK753R1-40E 기능
기능 N-channel TrenchMOS standard level FET
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BUK753R1-40E 데이터시트, 핀배열, 회로
BUK753R1-40E
N-channel TrenchMOS standard level FET
11 September 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1V at 175 °C
1.3 Applications
12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 32 V;
Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 40 V
[1] - - 100 A
- - 234 W
- 2.6 3.1 mΩ
- 22 - nC
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BUK753R1-40E pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK753R1-40E
N-channel TrenchMOS standard level FET
103
IAL
(A)
102
10
1
003aah196
(1)
(2)
(3)
10-1
10-3
10-2
10-1
1 tAL(ms) 10
Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
103
ID
(A)
102
10
1
Limit RDSon= VDS/ ID
DC
003aah197
tp =10 µ s
100 µ s
1 ms
10 ms
100 ms
10-1
10-1
1
10
VDS(V)
102
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
vertical in still air
BUK753R1-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2012
Min Typ Max Unit
- - 0.64 K/W
- 60 - K/W
© NXP B.V. 2012. All rights reserved
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BUK753R1-40E 전자부품, 판매, 대치품
NXP Semiconductors
BUK753R1-40E
N-channel TrenchMOS standard level FET
400
ID
(A)
300
200
100
003aah127
Tj = 175 °C
Tj = 25 °C
10-1
ID
(A)
10-2
10-3
10-4
10-5
003aah028
min typ max
0
0 2 4 6 VGS(V) 8
10-6
0246
VGS(V)
Fig. 8. Transfer characteristics; drain current as a
Fig. 9. Sub-threshold drain current as a function of
function of gate-source voltage; typical values
gate-source voltage
5
VGS(th)
(V)
4
003aah027
max
12
RDSon
(mΩ)
9
003aah055
5 5.5 6
3 typ
2 min
1
6
8 10
3
VGS(V) = 20
0
-60 0 60 120 180
Tj (°C)
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
0
0 100 200 300 ID(A) 400
Tj = 25 °C; tp = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK753R1-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2012
© NXP B.V. 2012. All rights reserved
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