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부품번호 | BUK753R1-40B 기능 |
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기능 | N-channel TrenchMOS standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BUK753R1-40B
N-channel TrenchMOS standard level FET
Rev. 3 — 8 February 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 3; see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11;
see Figure 12
Min Typ Max Unit
- - 40 V
[1] - - 75 A
- - 300 W
- 2.6 3.1 mΩ
NXP Semiconductors
BUK753R1-40B
N-channel TrenchMOS standard level FET
104
ID
(A)
103
102
10
1
10−1
03nh36
Limit RDSon = VDS / ID
Capped at 100 A due to package
DC
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
1
10
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see Figure 4
vertical in still air
Min Typ Max Unit
- - 0.5 K/W
- 60 - K/W
1
Zth(j-mb)
(K/W) δ = 0.5
0.2
10−1
0.1
0.05
0.02
10−2
03nh37
P δ = tp
T
single shot
10−3
10−6
10−5
10−4
10−3
10−2
tp
T
t
10−1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK753R1-40B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 8 February 2011
© NXP B.V. 2011. All rights reserved.
4 of 13
4페이지 NXP Semiconductors
BUK753R1-40B
N-channel TrenchMOS standard level FET
100
ID
(A)
80
60
40
20
0
0
03nh31
Tj = 175 °C
2
Tj = 25 °C
46
VGS (V)
5
VGS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60 120 180
Tj (°C)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
12
RDSon
(mΩ)
10
4.5 5
VGS = 6 V
5.5
03nh34
2
a
1.5
03aa27
8
6
7
48
10
2
0 100 200 300 400
ID (A)
1
0.5
0
−60
0
60 120 Tj (°C) 180
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK753R1-40B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 8 February 2011
© NXP B.V. 2011. All rights reserved.
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부품번호 | 상세설명 및 기능 | 제조사 |
BUK753R1-40B | N-channel TrenchMOS standard level FET | NXP Semiconductors |
BUK753R1-40E | N-channel TrenchMOS standard level FET | NXP Semiconductors |
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