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BUK753R1-40B 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 BUK753R1-40B은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 BUK753R1-40B 기능
기능 N-channel TrenchMOS standard level FET
제조업체 NXP Semiconductors
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BUK753R1-40B 데이터시트, 핀배열, 회로
BUK753R1-40B
N-channel TrenchMOS standard level FET
Rev. 3 — 8 February 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Low conduction losses due to low
on-state resistance
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V loads
„ Automotive systems
„ General purpose power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 3; see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11;
see Figure 12
Min Typ Max Unit
- - 40 V
[1] - - 75 A
- - 300 W
- 2.6 3.1 m




BUK753R1-40B pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK753R1-40B
N-channel TrenchMOS standard level FET
104
ID
(A)
103
102
10
1
101
03nh36
Limit RDSon = VDS / ID
Capped at 100 A due to package
DC
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
1
10
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see Figure 4
vertical in still air
Min Typ Max Unit
- - 0.5 K/W
- 60 - K/W
1
Zth(j-mb)
(K/W) δ = 0.5
0.2
101
0.1
0.05
0.02
102
03nh37
P δ = tp
T
single shot
103
106
105
104
103
102
tp
T
t
101
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK753R1-40B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 8 February 2011
© NXP B.V. 2011. All rights reserved.
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BUK753R1-40B 전자부품, 판매, 대치품
NXP Semiconductors
BUK753R1-40B
N-channel TrenchMOS standard level FET
100
ID
(A)
80
60
40
20
0
0
03nh31
Tj = 175 °C
2
Tj = 25 °C
46
VGS (V)
5
VGS(th)
(V)
4
3
2
1
0
60
0
max
typ
min
03aa32
60 120 180
Tj (°C)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
12
RDSon
(mΩ)
10
4.5 5
VGS = 6 V
5.5
03nh34
2
a
1.5
03aa27
8
6
7
48
10
2
0 100 200 300 400
ID (A)
1
0.5
0
60
0
60 120 Tj (°C) 180
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK753R1-40B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 8 February 2011
© NXP B.V. 2011. All rights reserved.
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