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부품번호 | BUK653R4-40C 기능 |
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기능 | N-channel TrenchMOS intermediate level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 14 페이지수
BUK653R4-40C
N-channel TrenchMOS intermediate level FET
Rev. 02 — 12 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard and logic level
gate drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 25 A;
on-state resistance Tj = 25 °C; see Figure 11
Min Typ Max Unit
- - 40 V
[1] - - 100 A
- - 204 W
- 3.05 3.6 mΩ
NXP Semiconductors
BUK653R4-40C
N-channel TrenchMOS intermediate level FET
200
ID
(A)
150
100
50
(1)
003aad044
120
Pder
(%)
80
40
03na19
0
0 50 100 150 200
Tmb (°C)
VGS ≥ 10 V
(1) Capped at 100 A due to package.
Fig 1. Continuous drain current as a function of
mounting base temperature
103
ID
(A)
102
Limit RDSon = VDS / ID
10
1
0
0 50 100 150 200
Tmb (°C)
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae329
tp =10 μ s
100 μ s
DC
1 ms
10 ms
100 ms
10-1
10-1 1 10 102
V DS (V)
Tmb = 25 °C; IDM is a single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK653R4-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 12 October 2010
© NXP B.V. 2010. All rights reserved.
4 of 14
4페이지 NXP Semiconductors
BUK653R4-40C
N-channel TrenchMOS intermediate level FET
Table 6. Characteristics …continued
Symbol
Parameter
Source-drain diode
VSD source-drain voltage
trr reverse recovery time
Qr recovered charge
Conditions
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
IS = 20 A; dIS/dt = -100 A/µs;
VGS = 0 V; VDS = 25 V
Min Typ Max Unit
- 0.8 1.2 V
- 48 - ns
- 82 - nC
150
gfs
(S)
120
90
60
30
0
0
003aae331
20 40 60 80
ID (A)
12
RDSon
(mΩ)
10
8
6
4
2
0
0
003aae334
5 10 15
VGS (V)
Fig 5. Forward transconductance as a function of
drain current; typical values
100
ID
(A)
80
003aae333
60
40
Tj = 175 °C
Tj = 25 °C
20
0
0 2 4 VGS (V) 6
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
250
ID
(A)
200
VGS (V) = 10
6.0
5.0
003aad002
4.5
150
4.0
100 3.8
3.6
50
3.4
3.2
0
0 0.5 1 1.5 2
VDS (V)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Output characteristics: drain current as a
function of gate-source voltage; typical values
function of drain-source voltage; typical values
BUK653R4-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 12 October 2010
© NXP B.V. 2010. All rights reserved.
7 of 14
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BUK653R4-40C | N-channel TrenchMOS intermediate level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |