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BUK653R4-40C 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 BUK653R4-40C은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 BUK653R4-40C 기능
기능 N-channel TrenchMOS intermediate level FET
제조업체 NXP Semiconductors
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BUK653R4-40C 데이터시트, 핀배열, 회로
BUK653R4-40C
N-channel TrenchMOS intermediate level FET
Rev. 02 — 12 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Suitable for standard and logic level
gate drive sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V Automotive systems
„ Electric and electro-hydraulic power
steering
„ Motors, lamps and solenoid control
„ Start-Stop micro-hybrid applications
„ Transmission control
„ Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 25 A;
on-state resistance Tj = 25 °C; see Figure 11
Min Typ Max Unit
- - 40 V
[1] - - 100 A
- - 204 W
- 3.05 3.6 m




BUK653R4-40C pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK653R4-40C
N-channel TrenchMOS intermediate level FET
200
ID
(A)
150
100
50
(1)
003aad044
120
Pder
(%)
80
40
03na19
0
0 50 100 150 200
Tmb (°C)
VGS 10 V
(1) Capped at 100 A due to package.
Fig 1. Continuous drain current as a function of
mounting base temperature
103
ID
(A)
102
Limit RDSon = VDS / ID
10
1
0
0 50 100 150 200
Tmb (°C)
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae329
tp =10 μ s
100 μ s
DC
1 ms
10 ms
100 ms
10-1
10-1 1 10 102
V DS (V)
Tmb = 25 °C; IDM is a single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK653R4-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 12 October 2010
© NXP B.V. 2010. All rights reserved.
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BUK653R4-40C 전자부품, 판매, 대치품
NXP Semiconductors
BUK653R4-40C
N-channel TrenchMOS intermediate level FET
Table 6. Characteristics …continued
Symbol
Parameter
Source-drain diode
VSD source-drain voltage
trr reverse recovery time
Qr recovered charge
Conditions
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
IS = 20 A; dIS/dt = -100 A/µs;
VGS = 0 V; VDS = 25 V
Min Typ Max Unit
- 0.8 1.2 V
- 48 - ns
- 82 - nC
150
gfs
(S)
120
90
60
30
0
0
003aae331
20 40 60 80
ID (A)
12
RDSon
(mΩ)
10
8
6
4
2
0
0
003aae334
5 10 15
VGS (V)
Fig 5. Forward transconductance as a function of
drain current; typical values
100
ID
(A)
80
003aae333
60
40
Tj = 175 °C
Tj = 25 °C
20
0
0 2 4 VGS (V) 6
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
250
ID
(A)
200
VGS (V) = 10
6.0
5.0
003aad002
4.5
150
4.0
100 3.8
3.6
50
3.4
3.2
0
0 0.5 1 1.5 2
VDS (V)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Output characteristics: drain current as a
function of gate-source voltage; typical values
function of drain-source voltage; typical values
BUK653R4-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 12 October 2010
© NXP B.V. 2010. All rights reserved.
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부품번호상세설명 및 기능제조사
BUK653R4-40C

N-channel TrenchMOS intermediate level FET

NXP Semiconductors
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