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Número de pieza | BUK754R0-40C | |
Descripción | N-channel TrenchMOS standard level FET | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! BUK754R0-40C
N-channel TrenchMOS standard level FET
Rev. 02 — 20 July 2010
Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
AEC Q101 compliant
Avalanche robust
Suitable for standard level gate drive
Suitable for thermally demanding
environment up to 175°C rating
1.3 Applications
12V Motor, lamp and solenoid loads
High performance automotive power
systems
High performance Pulse Width
Modulation (PWM) applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11;
see Figure 12
[1]
Min Typ Max Unit
- - 40 V
- - 100 A
- - 203 W
- 3.4 4 mΩ
1 page NXP Semiconductors
BUK754R0-40C
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see Figure 4
vertical in still air
Min Typ Max Unit
- - 0.74 K/W
- - 60 K/W
1
Zth (j-mb)
(K/W)
δ = 0.5
0.2
10-1
0.1
0.05
0.02
10-2 single pulse
003aac590
P δ = tp
T
10-3
10-6
10-5
10-4
10-3
10-2
tp
T
10-1
tp (s)
t
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK754R0-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 20 July 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page NXP Semiconductors
BUK754R0-40C
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history
Document ID
Release date
Data sheet status
Change notice
BUK754R0-40C v.2
Modifications:
20100720
Product data sheet
-
• Status changed from preliminary to product.
• Various changes to content.
BUK754R0-40C v.1 20090114
Preliminary data sheet -
Supersedes
BUK754R0-40C v.1
-
BUK754R0-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 20 July 2010
© NXP B.V. 2010. All rights reserved.
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BUK754R0-40C | N-channel TrenchMOS standard level FET | NXP Semiconductors |
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