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| Número de pieza | BUK754R3-40B | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK754R3-40B
N-channel TrenchMOS standard level FET
Rev. 02 — 21 February 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source avalanche
energy
Dynamic characteristics
QGD gate-drain charge
Conditions
Min Typ Max Unit
Tj ≥ 25 °C; Tj ≤ 175 °C
- - 40 V
VGS = 10 V; Tmb = 25 °C; [1] - - 75 A
see Figure 1; see Figure 3
Tmb = 25 °C; see Figure 2
- - 254 W
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11;
see Figure 12
- 3.8 4.3 mΩ
ID = 75 A; Vsup ≤ 40 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
- - 961 mJ
VGS = 10 V; ID = 25 A;
VDS = 32 V; Tj = 25 °C;
see Figure 13
- 22 - nC
[1] Continuous current is limited by package.
1 page  
NXP Semiconductors
BUK754R3-40B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to mounting see Figure 4
base
thermal resistance from junction to ambient vertical in still air
Min Typ Max Unit
- - 0.59 K/W
- - 60 K/W
1
Zth(j-mb) δ = 0.5
(K/W)
0.2
10−1 0.1
0.05
0.02
10−2
03nk46
P
tp
δ=
T
single shot
10−3
10−6
10−5
10−4
10−3
10−2
tp
T
10−1
tp (s)
t
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK754R3-40B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 February 2011
© NXP B.V. 2011. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BUK754R3-40B
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history
Document ID
Release date
Data sheet status
Change notice Supersedes
BUK754R3-40B v.2
Modifications:
20110221
Product data sheet
-
BUK75_764R3_40B v.1
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BUK754R3-40B separated from data sheet BUK75_764R3_40B v.1.
BUK75_764R3_40B v.1 20030409
Product data
-
-
BUK754R3-40B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 February 2011
© NXP B.V. 2011. All rights reserved.
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