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BUK7Y12-55B PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7Y12-55B
기능 N-channel TrenchMOS standard level FET
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BUK7Y12-55B 데이터시트, 핀배열, 회로
BUK7Y12-55B
N-channel TrenchMOS standard level FET
Rev. 03 — 7 April 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
„ Q101 compliant
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V and 24 V loads
„ Advanced braking systems (ABS)
„ Automotive systems
„ General purpose power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 4
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 20 A;
Tj = 25 °C; see Figure 13;
see Figure 12
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 61.8 A; Vsup 55 V;
RGS = 50 ; VGS = 10 V;
Tj(init) = 25 °C; unclamped
QGD
gate-drain charge ID = 20 A; VDS = 44 V;
VGS = 10 V; see Figure 14
Min Typ Max Unit
- - 55 V
- - 61.8 A
- - 105 W
- 8.2 12 m
- - 129 mJ
- 14.8 - nC




BUK7Y12-55B pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK7Y12-55B
N-channel TrenchMOS standard level FET
100
ID
(A)
75
003aac507
50
25
0
0 50 100 150 200
Tmb (°C)
120
Pder
(%)
80
03na19
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
102
IAL
(A)
10
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aac486
(1)
(2)
(3)
10-1
10-3
10-2
10-1
1 10
tAL (ms)
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK7Y12-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
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BUK7Y12-55B 전자부품, 판매, 대치품
NXP Semiconductors
BUK7Y12-55B
N-channel TrenchMOS standard level FET
60
20 10
ID
(A)
40
003aad467
6.2
VGS (V) = 6
5.7
5.4
20
5
0
012345
VDS (V)
40
RDS on
(mΩ)
30
5
003aad468
5.4 VGS (V) = 5.7 6
6.2
20
10
0
0
10
20
20 40 ID (A) 60
Fig 6. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values.
of drain current; typical values.
56
gfs
(S)
003aad469
60
ID
(A)
003aad470
44 40
32
20
0
20 40 60
ID (A)
20
0
0
Tj = 175°C
25 °C
2 4 6 VGS (V) 8
Fig 8. Forward transconductance as a function of
drain current; typical values.
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
BUK7Y12-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
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부품번호상세설명 및 기능제조사
BUK7Y12-55B

N-channel TrenchMOS standard level FET

NXP Semiconductors
NXP Semiconductors

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