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부품번호 | BUK7Y4R8-60E 기능 |
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기능 | N-channel 60V 4.8m ohm standard level MOSFET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BUK7Y4R8-60E
N-channel 60 V, 4.8 mΩ standard level MOSFET in LFPAK56
7 May 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
• Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
3. Applications
• 12 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QGD
gate-drain charge
ID = 25 A; VDS = 48 V; VGS = 10 V;
Tj = 25 °C; Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 60 V
[1] - - 100 A
- - 238 W
- 2.9 4.8 mΩ
- 22.2 - nC
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NXP Semiconductors
BUK7Y4R8-60E
N-channel 60 V, 4.8 mΩ standard level MOSFET in LFPAK56
103
IAL
(A)
102
003aai641
10 (1)
(2)
1
(3)
10-1
10-3
10-2
10-1
1 10
tAL (ms)
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time
103
ID
(A)
102
10
1
Limit RDSon = VDS / ID
tp =10 µ s
100 µ s
003aai642
1 ms
DC 10 ms
100 ms
10-1
10-1
1
10 102 103
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 5
Min Typ Max Unit
- - 0.63 K/W
BUK7Y4R8-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 May 2013
© NXP B.V. 2013. All rights reserved
4 / 13
4페이지 NXP Semiconductors
BUK7Y4R8-60E
N-channel 60 V, 4.8 mΩ standard level MOSFET in LFPAK56
240
ID
(A)
160
003aai647
5
VGS(th)
(V)
4
3
003aah027
max
typ
2 min
80
Tj = 175 °C
Tj = 25 °C
0
0 2 4 VGS(V) 6
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
1
0
-60 0 60 120 180
Tj (°C)
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
10-1
ID
(A)
10-2
10-3
003aah028
min typ max
10-4
10-5
10-6
0246
VGS(V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
20
RDSon
(mΩ)
15
4.5
003aai650
5
10
5.5
5
6
VGS(V) = 10
0
0 25 50 75 ID(A) 100
Tj = 25 °C; tp = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK7Y4R8-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 May 2013
© NXP B.V. 2013. All rights reserved
7 / 13
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BUK7Y4R8-60E | N-channel 60V 4.8m ohm standard level MOSFET | NXP Semiconductors |
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