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부품번호 | BUK7Y8R7-60E 기능 |
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기능 | N-channel 60V 8.7m ohm standard level MOSFET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 12 페이지수
BUK7Y8R7-60E
N-channel 60 V, 8.7 mΩ standard level MOSFET in LFPAK56
7 May 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
• Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
3. Applications
• 12 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 20 A; Tj = 25 °C;
resistance
Fig. 10
Dynamic characteristics
QGD
gate-drain charge
ID = 20 A; VDS = 48 V; VGS = 10 V;
Tj = 25 °C; Fig. 12; Fig. 13
Min Typ Max Unit
- - 60 V
- - 87 A
- - 147 W
- 5.27 8.7 mΩ
- 14 - nC
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NXP Semiconductors
BUK7Y8R7-60E
N-channel 60 V, 8.7 mΩ standard level MOSFET in LFPAK56
103
ID
(A)
102
10
Limit RDSon = VDS / ID
DC
003aai897
tp = 10 us
100 us
1 1 ms
10 ms
10-1
1
100 ms
10
VDS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
102
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 4
Min Typ Max Unit
- - 1.02 K/W
10
Zth(j-mb)
(K/W)
003aai628
1
δ = 0.5
0.2
10-1 0.1
0.05
0.02
10-2
single shot
P
tp
δ= T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp
T
tp (s)
t
1
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7Y8R7-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 May 2013
© NXP B.V. 2013. All rights reserved
4 / 12
4페이지 NXP Semiconductors
BUK7Y8R7-60E
N-channel 60 V, 8.7 mΩ standard level MOSFET in LFPAK56
10-1
ID
(A)
10-2
10-3
10-4
10-5
003aah028
min typ max
20
RDSon
15
10
5
003aai905
5.5 V 6 V 6.5 V
7V
8V
20 V
10 V
10-6
0246
VGS(V)
Fig. 9. Sub-threshold drain current as a function of
gate-source voltage
0
0 40 80 120 160 200
ID (A)
Tj = 25 °C; tp = 300 μs
Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values
2.4
a
1.6
003aaj815
0.8
0
-60 0 60 120 180
Tj (°C)
Fig. 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig. 12. Gate charge waveform definitions
BUK7Y8R7-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 May 2013
© NXP B.V. 2013. All rights reserved
7 / 12
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BUK7Y8R7-60E | N-channel 60V 8.7m ohm standard level MOSFET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |