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PMZB790SN 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 PMZB790SN은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 PMZB790SN 기능
기능 single N-channel Trench MOSFET
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PMZB790SN 데이터시트, 핀배열, 회로
PMZB790SN
60 V, single N-channel Trench MOSFET
14 August 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Fast switching
Trench MOSFET technology
Logic-level compatible
Ultra thin package profile of 0.37mm height
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - 60 V
VGS gate-source voltage
-20 -
20 V
ID
drain current
VGS = 10 V; Tamb = 25 °C
[1] - - 650 mA
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 300 mA; Tj = 25 °C
resistance
- 0.79 0.94 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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PMZB790SN pdf, 반도체, 판매, 대치품
NXP Semiconductors
PMZB790SN
60 V, single N-channel Trench MOSFET
10
ID
(A)
1
Limit RDSon = VDS/ID
017aaa685
tp = 1 ms
tp = 10 ms
tp = 100 ms
10-1
DC; Tsp = 25 °C
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
10-2
10-1
IDM = single pulse
1
10 102
VDS (V)
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to
ambient
in free air
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1] -
305 360 K/W
[2] -
150 175 K/W
- - 40 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
PMZB790SN
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 August 2012
© NXP B.V. 2012. All rights reserved
4 / 13

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PMZB790SN 전자부품, 판매, 대치품
NXP Semiconductors
PMZB790SN
60 V, single N-channel Trench MOSFET
3
RDSon
(Ω)
2
3.5 V
017aaa687
4V
4.5 V
5
RDSon
(Ω)
4
3
017aaa688
5V 2
Tj = 150 °C
1 6V
10 V
1
Tj = 25 °C
0
0 0.2 0.4 0.6 0.8 1
ID (A)
Tj = 25 °C
Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
1.0
ID
(A)
0.8
017aaa689
0
0 2 4 6 8 10
VGS (V)
ID = 0.8 A
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
2.4 03aa28
a
1.8
0.6
1.2
0.4
0.2
Tj = 150 °C
Tj = 25 °C
0.6
0
012345
VGS (V)
VDS > ID × RDSon
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
- 60 0
60 120 180
Tj (°C)
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
PMZB790SN
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 August 2012
© NXP B.V. 2012. All rights reserved
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관련 데이터시트

부품번호상세설명 및 기능제조사
PMZB790SN

single N-channel Trench MOSFET

NXP Semiconductors
NXP Semiconductors

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