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| Fabricantes | NXP Semiconductors | |
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PSMN2R0-60PS
N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220
4 October 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This
product is designed and qualified for use in a wide range of industrial, communications
and domestic equipment.
1.2 Features and benefits
• High efficiency due to low switching and conduction losses
• Suitable for standard level gate drive sources
1.3 Applications
• DC-to-DC converters
• Load switching
• Motor control
• Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Tj junction temperature
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 12; Fig. 13
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 75 A; VDS = 30 V;
Fig. 14; Fig. 15
Min Typ Max Unit
- - 60 V
[1] - - 120 A
- - 338 W
-55 -
175 °C
[2] -
-
1.8 2.2 mΩ
3 3.5 mΩ
- 32 45 nC
- 137 192 nC
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1 page  
NXP Semiconductors
PSMN2R0-60PS
N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220
Symbol
Rth(j-a)
Parameter
thermal resistance
from junction to
ambient
Conditions
Vertical in free air
Min Typ Max Unit
- 60 - K/W
1
Zth (j-mb)
(K/W)
δ = 0.5
10-1
0.2
0.1
0.05
10-2 0.02
003aaf752
P
δ=
tp
T
single shot
tp t
10-3
T
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C;
voltage
Fig. 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 11; Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 175 °C
IGSS gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 12; Fig. 13
[1]
PSMN2R0-60PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 October 2012
Min Typ Max Unit
54 - - V
60 - - V
1- - V
234V
- - 4.6 V
-
0.03 10
µA
- - 500 µA
- - 100 nA
- - 100 nA
- 1.8 2.2 mΩ
- 4.3 5.1 mΩ
© NXP B.V. 2012. All rights reserved
5 / 14
5 Page 
NXP Semiconductors
PSMN2R0-60PS
N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220
8. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
EA
p A1
q mounting
D1 base
D
L1(1)
b1(2)
L (3×)
b2(2)
(2×)
L2(1)
1 23
ee
b(3×)
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1(2) b2(2) c
D D1 E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7 1.40 0.9
4.1 1.25 0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
JEITA
EUROPEAN
PROJECTION
SOT78
3-lead TO-220AB
SC-46
ISSUE DATE
08-04-23
08-06-13
Fig. 18. Package outline TO-220AB (SOT78)
PSMN2R0-60PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 October 2012
© NXP B.V. 2012. All rights reserved
11 / 14
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