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부품번호 | BR93H76-2C 기능 |
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기능 | Microwire BUS EEPROM | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
Datasheet
Serial EEPROM Series Automotive EEPROM
125℃ Operation Microwire BUS EEPROM (3-wire)
BR93H76-2C
General Description
BR93H76-2C is a serial EEPROM of serial 3-line
interface method.
Features
Conforming to Microwire BUS
Withstands Electrostatic Voltage up to 6kV
(HBM method typ)
Wide Temperature Range -40℃ to +125℃
Same package line-up and same pin configuration
2.5V to 5.5V Single Supply Voltage Operation
Address Auto Increment Function at READ
Operation
Prevention of write mistake
¾ Write prohibition at power on
¾ Write prohibition by command code
¾ Write mistake prevention circuit at low voltage
Self-timed programming cycle
Program Condition Display by READY / BUSY
Low Supply Current
¾ Write Operation (5V) : 0.8mA (Typ)
¾ Read Operation (5V) : 0.5mA (Typ)
¾ Standby Operation (5V) : 0.1μA (Typ)
Compact package MSOP8 / TSSOP-B8 / SOP8 /
SOP-J8
High-Reliability using ROHM Original
Double-Cell structure
More than 100 years data retention (Ta≦125℃)
More than 1 million write cycles (Ta≦125℃)
Data set to FFFFh on all addresses at shipment
AEC-Q100 Qualified
Package
MSOP8
TSSOP-B8
SOP8
SOP-J8
MSOP8
SOP8
(Typ)
(Typ) (Max)
2.90mm x 4.00mm x 0.90mm
3.00mm x 6.40mm x 1.20mm
5.00mm x 6.20mm x 1.71mm
4.90mm x 6.00mm x 1.65mm
TSSOP-B8
SOP-J8
BR93H76-2C
Package Type
Capacity Bit Format Product Name
8Kbit
512×16
BR93H76-2C
Supply Voltage
2.5V to 5.5V
MSOP8 TSSOP-B8
RFVM
RFVT
●●
SOP8
RF
●
SOP-J8
RFJ
●
○Product structure:Silicon monolithic integrated circuit
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product is not designed protection against radioactive rays
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BR93H76-2C
Datasheet
Serial Input / Output Timing
CS
tCSS
SK
tDIS
DI
DO(READ)
DO(WRITE)
tSKH
tSKL
tDIH
tCSH
tPD0
tPD1
STATUS VALID
tDF
Figure 1. Serial Input / Output Timing Diagram
○Data is taken from DI, in sync with the rise of SK.
○At READ command, data is outputted from DO in sync with the rise of SK.
○After WRITE command input, the status signal of WRITE (READY / BUSY) can be monitored from DO by setting CS to “H”
after tCS, from the fall of CS, and will display a valid status until the next command start bit is inputted. But, if CS is set to
“L”, DO sets to High-Z state.
○To execute a series of commands, CS is set to “L” once after completion of each command for internal circuit reset
Block Diagram
CS Command decode
Control
SK
Clock generation
DI Command
register
DO Dummy bit
Power source voltage detection
Write
prohibition
High voltage occurrence
Address
buffer
Data
register
Address
9bit decoder
16bit
R/W
amplifier
9bit
16bit
8,192 bit
EEPROM
Figure 2. Block Diagram
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
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4페이지 BR93H76-2C
Typical Performance Curves‐Continued
Datasheet
5.0
4.0 Ta= -40℃
Ta= 25℃
Ta= 125℃
3.0
SPEC
2.0
5.0
4.0
3.0 Ta= -40℃
Ta= 25℃
Ta= 125℃
SPEC
2.0
1.0 1.0
0.0
0
0.4 0.8 1.2
OUTPUT HIGH CURRENT : IOH[mA]
1.6
Figure 8. Output High Voltage vs. Ouptput High Current
( VCC=2.5V)
12
SPEC
10
8
Ta= -40℃
6 Ta= 25℃
Ta= 125℃
4
2
0
2 3 45 6
SUPPLY VOLTAGE : VCC[V]
0.0
0
0.4 0.8 1.2
OUTPUT HIGH CURRENT : IOH[mA]
1.6
Figure 9. Output High Voltage vs. Output High Current
( VCC=4.0V)
12
SPEC
10
8 Ta= -40℃
Ta= 25℃
Ta= 125℃
6
4
2
0
2 3 45 6
SUPPLY VOLTAGE : VCC[V]
Figure 10. Input Leak Current, (CS, SK, DI)
vs. Supply Voltage
Figure 11. Output Leak Current, (DO)
vs. Supply Voltage
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
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7페이지 | |||
구 성 | 총 30 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BR93H76-2C | Microwire BUS EEPROM | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |