|
|
|
부품번호 | BUK9Y25-60E 기능 |
|
|
기능 | N-channel 60V 25m ohm logic level MOSFET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BUK9Y25-60E
N-channel 60 V, 25 mΩ logic level MOSFET in LFPAK56
7 May 2013
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
• Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
• 12 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 11
resistance
Dynamic characteristics
QGD
gate-drain charge
VGS = 5 V; ID = 10 A; VDS = 48 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
- - 60 V
- - 34 A
- - 65 W
-
20.8 25
mΩ
- 4.2 - nC
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
BUK9Y25-60E
N-channel 60 V, 25 mΩ logic level MOSFET in LFPAK56
102
IAL
(A)
10
1
003aai991
(1)
(2)
10-1
(3)
10-2
10-3
10-2
10-1
1 tAL(ms) 10
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time
103
ID
(A)
102
10
Limit RDSon = VDS / ID
003aai992
tp = 10 us
100 us
1 DC
1 ms
10 ms
10-1 100 ms
10-2
1
10
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
102
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 5
Min Typ Max Unit
- - 2.31 K/W
BUK9Y25-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 May 2013
© NXP B.V. 2013. All rights reserved
4 / 13
4페이지 NXP Semiconductors
BUK9Y25-60E
N-channel 60 V, 25 mΩ logic level MOSFET in LFPAK56
50
ID
(A)
40
30
20
003aai997
3
VGS(th)
(V)
2.5
2
1.5
1
max
typ
min
003aah025
Fig. 8.
10
175°C
Tj = 25°C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS (V)
Transfer characteristics; drain current as a
function of gate-source voltage; typical values
0.5
0
-60 0 60 120 180
Tj (°C)
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
10-1
ID
(A)
10-2
10-3
003aah026
min typ max
50
RDSon
(mΩ)
40
30
2.8 3
003aaj000
3.5
4.5
10-4 20
VGS(V) = 10
10-5 10
10-6
0123
VGS (V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
0
0 10 20 30 40 ID(A) 50
Tj = 25 °C; tp = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK9Y25-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 May 2013
© NXP B.V. 2013. All rights reserved
7 / 13
7페이지 | |||
구 성 | 총 13 페이지수 | ||
다운로드 | [ BUK9Y25-60E.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BUK9Y25-60E | N-channel 60V 25m ohm logic level MOSFET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |