BUK9K17-60E Datasheet PDF - NXP Semiconductors
| Part Number | BUK9K17-60E | |
| Description | Dual N-channel 60V 17m ohm logic level MOSFET | |
| Manufacturers | NXP Semiconductors | |
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BUK9K17-60E
Dual N-channel 60 V, 17 mΩ logic level MOSFET
19 March 2014
Product data sheet
1. General description
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
• Dual MOSFET
• Q101 Compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
• 12 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
[1]
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics FET1 and FET2
RDSon
drain-source on-state VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 11
resistance
Dynamic characteristics FET1 and FET2
QGD
gate-drain charge
ID = 10 A; VDS = 48 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 60 V
- - 26 A
- - 53 W
- 14 17 mΩ
- 5.7 - nC
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NXP Semiconductors
BUK9K17-60E
Dual N-channel 60 V, 17 mΩ logic level MOSFET
10
Zth(j-mb)
(K/W)
δ = 0.5
1 0.2
0.1
0.05
10-1 0.02
003aaj500
P
δ=
tp
T
single shot
tp t
T
10-2
10-6
10-5
10-4
10-3
10-2
10-1 tp (s)
1
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration.
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics FET1 and FET2
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 9; Fig. 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 9; Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 9; Fig. 10
IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 175 °C
IGSS gate leakage current VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 11
VGS = 5 V; ID = 10 A; Tj = 175 °C;
Fig. 11; Fig. 12
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 11
Dynamic characteristics FET1 and FET2
QG(tot)
QGS
total gate charge
gate-source charge
ID = 10 A; VDS = 48 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
BUK9K17-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 March 2014
Min Typ Max Unit
54 - - V
60 - - V
1.4 1.7 2.1 V
0.5 - - V
- - 2.45 V
-
0.02 1
µA
- - 500 µA
- 2 100 nA
- 2 100 nA
- 14 17 mΩ
- 31.6 38.4 mΩ
- 12.4 15.6 mΩ
- 16.5 - nC
- 3.3 - nC
© NXP Semiconductors N.V. 2014. All rights reserved
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