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BUK7K17-60E PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7K17-60E
기능 Dual N-channel 60V 14m ohm standard level MOSFET
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BUK7K17-60E 데이터시트, 핀배열, 회로
BUK7K17-60E
Dual N-channel 60 V, 14 mΩ standard level MOSFET
10 December 2013
Product data sheet
1. General description
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package
using TrenchMOS technology. This product has been designed and qualified to
AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
Dual MOSFET
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) of greater than 1 V at 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics FET1 and FET2
RDSon
drain-source on-state VGS = 10 V; ID = 10 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics FET1 and FET2
QGD
gate-drain charge
ID = 10 A; VDS = 48 V; VGS = 20 V;
Tj = 25 °C; Fig. 13; Fig. 14
[1] Continuous current is limited by package
Min Typ Max Unit
- - 60 V
[1] - - 30 A
- - 53 W
-
11.3 14
- 8.1 - nC
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BUK7K17-60E pdf, 반도체, 판매, 대치품
NXP Semiconductors
102
IAL
(A)
10
1
BUK7K17-60E
Dual N-channel 60 V, 14 mΩ standard level MOSFET
003aal070
(1)
(2)
(3)
10-1
10-3
10-2
10-1
1
10
tAL (ms)
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time
103
ID
(A)
102
10
Limit RDSon = VDS / ID
003aal071
tp = 10 us
100 us
1 DC 1 ms
10 ms
100 ms
10-1
10-1
1
10 102
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
Minimum footprint; mounted on a
printed circuit board
BUK7K17-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 December 2013
Min Typ Max Unit
- - 2.84 K/W
- 95 - K/W
© NXP N.V. 2013. All rights reserved
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BUK7K17-60E 전자부품, 판매, 대치품
NXP Semiconductors
BUK7K17-60E
Dual N-channel 60 V, 14 mΩ standard level MOSFET
40
ID
(A)
32
10 V
6.5 V
6V
24
003aal073
10 V
VGS = 5.5 V
6V
10-1
ID
(A)
10-2
10-3
003aah028
min typ max
16 10-4
5V
Fig. 8.
8
4.5 V
0
0 0.6 1.2
Tj = 25 °C; tp = 300 μs
4V
1.8 2.4
VDS (V)
3
Output characteristics; drain current as a
function of drain-source voltage; typical values
10-5
10-6
0246
VGS(V)
Fig. 9. Sub-threshold drain current as a function of
gate-source voltage
5
VGS(th)
(V)
4
003aah027
max
50
RDSon
40
5V
5.5 V
003aal077
3 typ
2 min
1
30 6.5 V
20 6 V
7V
8V
10 VGS = 10 V
0
-60 0 60 120 180
Tj (°C)
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
0
0 8 16 24 32 40
ID (A)
Tj = 25 °C; tp = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK7K17-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 December 2013
© NXP N.V. 2013. All rights reserved
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부품번호상세설명 및 기능제조사
BUK7K17-60E

Dual N-channel 60V 14m ohm standard level MOSFET

NXP Semiconductors
NXP Semiconductors

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